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Optics Letters

Optics Letters


  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 15 — Aug. 1, 2014
  • pp: 4525–4528

Enhanced near-infrared photodetection with avalanche gain in silicon microdisk resonators integrated with p-n diodes

Haike Zhu, Linjie Zhou, Rui Yang, Xinwan Li, and Jianping Chen  »View Author Affiliations

Optics Letters, Vol. 39, Issue 15, pp. 4525-4528 (2014)

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We investigate the photocurrent generation by two-photon absorption effect in silicon microdisk resonators integrated with p-n diodes. The photocurrent is quite dependent on the p-n junction position with respect to the whispering gallery mode. Avalanche gain increases significantly when the bias exceeds 19V, leading to considerable enhancement of photocurrent. At 22V bias with on-chip optical power of 44.7 μW, the responsivity exceeds 1 A/W with an avalanche gain of 188 while the dark current is more than 50 times lower than the photocurrent.

© 2014 Optical Society of America

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(230.5750) Optical devices : Resonators
(040.1345) Detectors : Avalanche photodiodes (APDs)

ToC Category:
Optical Devices

Original Manuscript: April 23, 2014
Revised Manuscript: June 22, 2014
Manuscript Accepted: June 22, 2014
Published: July 29, 2014

Haike Zhu, Linjie Zhou, Rui Yang, Xinwan Li, and Jianping Chen, "Enhanced near-infrared photodetection with avalanche gain in silicon microdisk resonators integrated with p-n diodes," Opt. Lett. 39, 4525-4528 (2014)

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