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Optics Letters

Optics Letters


  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 16 — Aug. 15, 2014
  • pp: 4691–4694

Size-controlled Ge nanostructures for enhanced Er3+ light emission

Javier Martín-Sánchez, Rosalía Serna, J. Toudert, Benito Alén, and Carmen Ballesteros  »View Author Affiliations

Optics Letters, Vol. 39, Issue 16, pp. 4691-4694 (2014)

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The potential of Ge nanoparticles (NPs) embedded in Al2O3 with tunable effective optical bandgap values in the range of 1.0–3.3 eV to induce enhanced Er3+ light emission is investigated. We demonstrate nonresonant indirect excitation of the Er3+ ions mediated by the Ge NPs at room temperature. Efficient Er3+ light emission enhancement is obtained for Ge NPs with large effective optical bandgaps in the range of 1.85 to 2.8 eV. The coupled Ge NP–Er emission shows a negligible thermal quenching from 10 K to room temperature that is related to Er3+ de-excitation through thermally activated defect states.

© 2014 Optical Society of America

OCIS Codes
(130.3130) Integrated optics : Integrated optics materials
(140.3390) Lasers and laser optics : Laser materials processing
(160.5690) Materials : Rare-earth-doped materials
(250.5230) Optoelectronics : Photoluminescence
(160.4236) Materials : Nanomaterials
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:

Original Manuscript: May 16, 2014
Revised Manuscript: June 24, 2014
Manuscript Accepted: June 29, 2014
Published: August 6, 2014

Javier Martín-Sánchez, Rosalía Serna, J. Toudert, Benito Alén, and Carmen Ballesteros, "Size-controlled Ge nanostructures for enhanced Er3+ light emission," Opt. Lett. 39, 4691-4694 (2014)

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