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Optics Letters

Optics Letters


  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 16 — Aug. 15, 2014
  • pp: 4711–4714

GeSn/Ge multiquantum well photodetectors on Si substrates

M. Oehme, D. Widmann, K. Kostecki, P. Zaumseil, B. Schwartz, M. Gollhofer, R. Koerner, S. Bechler, M. Kittler, E. Kasper, and J. Schulze  »View Author Affiliations

Optics Letters, Vol. 39, Issue 16, pp. 4711-4714 (2014)

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Vertical incidence GeSn/Ge multiquantum well (MQW) pin photodetectors on Si substrates were fabricated with a Sn concentration of 7%. The epitaxial structure was grown with a special low temperature molecular beam epitaxy process. The Ge barrier in the GeSn/Ge MQW was kept constant at 10 nm. The well width was varied between 6 and 12 nm. The GeSn/Ge MQW structures were grown pseudomorphically with the in-plane lattice constant of the Ge virtual substrate. The absorption edge shifts to longer wavelengths with thicker QWs in agreement with expectations from smaller quantization energies for the thicker QWs.

© 2014 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(160.6000) Materials : Semiconductor materials
(310.6845) Thin films : Thin film devices and applications
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:

Original Manuscript: June 18, 2014
Revised Manuscript: July 4, 2014
Manuscript Accepted: July 5, 2014
Published: August 6, 2014

M. Oehme, D. Widmann, K. Kostecki, P. Zaumseil, B. Schwartz, M. Gollhofer, R. Koerner, S. Bechler, M. Kittler, E. Kasper, and J. Schulze, "GeSn/Ge multiquantum well photodetectors on Si substrates," Opt. Lett. 39, 4711-4714 (2014)

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