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Optics Letters

Optics Letters


  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 16 — Aug. 15, 2014
  • pp: 4784–4787

Heterogeneously integrated III–V-on-silicon multibandgap superluminescent light-emitting diode with 290  nm optical bandwidth

A. De Groote, J. D. Peters, M. L. Davenport, M. J. R. Heck, R. Baets, G. Roelkens, and J. E. Bowers  »View Author Affiliations

Optics Letters, Vol. 39, Issue 16, pp. 4784-4787 (2014)

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A broadband superluminescent III–V-on-silicon light-emitting diode (LED) was realized. To achieve the large bandwidth, quantum well intermixing and multiple die bonding of InP on a silicon photonic waveguide circuit were combined for the first time, to the best of our knowledge. The device consists of four sections with different bandgaps, centered around 1300, 1380, 1460, and 1540 nm. The fabricated LEDs were connected on-chip in a serial way, where the light generated in the smaller bandgap sections travels through the larger bandgap sections. By balancing the pump current in the four LEDs, we achieved 292 nm of 3 dB bandwidth and an on-chip power of 8dBm.

© 2014 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

Original Manuscript: June 3, 2014
Manuscript Accepted: June 22, 2014
Published: August 8, 2014

A. De Groote, J. D. Peters, M. L. Davenport, M. J. R. Heck, R. Baets, G. Roelkens, and J. E. Bowers, "Heterogeneously integrated III–V-on-silicon multibandgap superluminescent light-emitting diode with 290  nm optical bandwidth," Opt. Lett. 39, 4784-4787 (2014)

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