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Optics Letters

Optics Letters


  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 16 — Aug. 15, 2014
  • pp: 4839–4842

High-speed silicon modulator with band equalization

Hao Xu, Xianyao Li, Xi Xiao, Peiji Zhou, Zhiyong Li, Jinzhong Yu, and Yude Yu  »View Author Affiliations

Optics Letters, Vol. 39, Issue 16, pp. 4839-4842 (2014)

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Electro-optic modulation up to 70Gbit/s has been demonstrated using a silicon Mach–Zehnder modulator with a bias voltage of 1.5V. In a wide frequency range from DC, an increasing input impedance of the modulator was designed to equalize its electro-optic frequency response. Without a bias voltage, the 3 dB bandwidth was measured as 35 GHz and it is predicted to be as high as 55 GHz at 3V bias. Frequency responses of the modulator operated with counter-propagating waves were tested to verify the proposed prediction model.

© 2014 Optical Society of America

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.3120) Integrated optics : Integrated optics devices
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:

Original Manuscript: April 22, 2014
Revised Manuscript: July 7, 2014
Manuscript Accepted: July 16, 2014
Published: August 13, 2014

Hao Xu, Xianyao Li, Xi Xiao, Peiji Zhou, Zhiyong Li, Jinzhong Yu, and Yude Yu, "High-speed silicon modulator with band equalization," Opt. Lett. 39, 4839-4842 (2014)

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