Abstract
High temporal and spatial coherent simultaneous long-wavelength/mid-wavelength (LW/MW) two-color focal plane array (FPA) infrared detection is the cutting-edge technique for third-generation infrared remote sensing. In this Letter, HgCdTe LW/MW two-color infrared detectors were designed and fabricated. The top long-wavelength and bottom mid-wavelength infrared planar photodiodes were processed by selective -implantation after etching the long-wavelength epilayer into a curvature and exposing the mid-wavelength layers for the implantation of the region of the MW photodiode by a micro-mesa array technique. A HgCdTe infrared FPA detector is fabricated photo-lithographically by simultaneous nonplanar -implantation of the LW and MW photodiodes, passivation and metallization of the sidewalls, mesa isolation, and flip-chip hybridization with a read-out integrated circuit. The inner mechanisms for suppressing the cross talk and improving photoresponse have been carried out by combining experimental work with numerical simulations.
© 2014 Optical Society of America
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