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Optics Letters

Optics Letters


  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 3 — Feb. 1, 2014
  • pp: 422–425

Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures

Xing-Yu Liu, Chong-Xin Shan, Chen Jiao, Shuang-Peng Wang, Hai-Feng Zhao, and De-Zhen Shen  »View Author Affiliations

Optics Letters, Vol. 39, Issue 3, pp. 422-425 (2014)

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Well-aligned ZnO nanowires have been prepared on sapphire substrate, and structural and optical characterizations indicate that the nanowires are of single crystalline and have relatively high luminescent quality. By employing the ZnO nanowires as an active layer, p-Zn0.68Mg0.32O:N/n-ZnO nanowire heterostructure light-emitting devices (LEDs) have been fabricated. The LEDs show pure ultraviolet emission when a forward bias is applied, while the deep-level emission frequently observed in ZnO p-n junctions is almost totally invisible. The devices can work continuously for over 27 h under the injection of a current density of 500mA/cm2, indicating their good stability.

© 2014 Optical Society of America

OCIS Codes
(160.4670) Materials : Optical materials
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

Original Manuscript: November 5, 2013
Revised Manuscript: December 8, 2013
Manuscript Accepted: December 11, 2013
Published: January 20, 2014

Xing-Yu Liu, Chong-Xin Shan, Chen Jiao, Shuang-Peng Wang, Hai-Feng Zhao, and De-Zhen Shen, "Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures," Opt. Lett. 39, 422-425 (2014)

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