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Optics Letters

Optics Letters


  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 3 — Feb. 1, 2014
  • pp: 426–429

Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer

Wei Xu, Wenyu Ji, Pengtao Jing, Xi Yuan, Y. A. Wang, Weidong Xiang, and Jialong Zhao  »View Author Affiliations

Optics Letters, Vol. 39, Issue 3, pp. 426-429 (2014)

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We have demonstrated an efficient inverted CdSe/CdS/ZnS core/shell quantum-dot light-emitting device (QD-LED) using a solution-processed sol–gel TiO2 and ZnO nanoparticle composite layer as an electron-injection layer with controllable morphology and investigated the electroluminescence mechanism. The introduction of the ZnO layer can lead to the formation of spin-coated uniform QD films and fabrication of high-luminance QD-LEDs. The TiO2 layer improves the balance of charge injection due to its lower electron mobility relative to the ZnO layer. These results offer a practicable platform for the realization of a trade-off between the luminance and efficiency in the inverted QD-LEDs with TiO2/ZnO composites as the electron contact layer.

© 2014 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.4170) Optical devices : Multilayers
(260.3800) Physical optics : Luminescence
(160.4236) Materials : Nanomaterials

ToC Category:
Optical Devices

Original Manuscript: September 19, 2013
Revised Manuscript: November 6, 2013
Manuscript Accepted: December 15, 2013
Published: January 20, 2014

Wei Xu, Wenyu Ji, Pengtao Jing, Xi Yuan, Y. A. Wang, Weidong Xiang, and Jialong Zhao, "Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer," Opt. Lett. 39, 426-429 (2014)

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