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Optics Letters

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  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 4 — Feb. 15, 2014
  • pp: 805–808

Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme

Chun-Ying Huang, Ya-Ju Lee, Tai-Yuan Lin, Shao-Lun Chang, Jan-Tian Lian, Hsiu-Mei Lin, Nie-Chuan Chen, and Ying-Jay Yang  »View Author Affiliations


Optics Letters, Vol. 39, Issue 4, pp. 805-808 (2014)
http://dx.doi.org/10.1364/OL.39.000805


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Abstract

In this work p - ZnO / n - GaN heterojunction diodes were directly formed on the Si substrate by a combination of cost-effective solgel spin-coating and thermal annealing treatment. Spin-coated n -ZnO films on InN/GaN/Si wafers were converted to p -type polarity after thermal treatment of proper annealing durations. X-ray diffraction (XRD) analysis reveals that InN-codoped ZnO films have grown as the standard hexagonal wurtzite structure with a preferential orientation in the (002) direction. The intensity of the (002) peak decreases for a further extended annealing duration, indicating the greater incorporation of dopants, also confirmed by x-ray photoelectron spectroscopy and low-temperature photoluminescence. Hall and resistivity measurements validate that our p -type ZnO film has a high carrier concentration of 3.73 × 10 17 cm 3 , a high mobility of 210 cm 2 / Vs , and a low resistivity of 0.079 Ωcm. As a result, the proposed p - ZnO / n - GaN heterojunction diode displays a well-behaving current rectification of a typical p - n junction, and the measured current versus voltage (I–V) characteristic is hence well described by the modified Shockley equation. The research on the fabrication of p - ZnO / n - GaN heterojunctions shown here generates useful advances in the production of cost-effective ZnO-based optoelectronic devices.

© 2014 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(160.6060) Materials : Solgel
(230.0250) Optical devices : Optoelectronics

ToC Category:
Materials

History
Original Manuscript: November 4, 2013
Revised Manuscript: December 17, 2013
Manuscript Accepted: January 3, 2014
Published: February 6, 2014

Citation
Chun-Ying Huang, Ya-Ju Lee, Tai-Yuan Lin, Shao-Lun Chang, Jan-Tian Lian, Hsiu-Mei Lin, Nie-Chuan Chen, and Ying-Jay Yang, "Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme," Opt. Lett. 39, 805-808 (2014)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-39-4-805


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