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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 6 — Mar. 15, 2014
  • pp: 1665–1668

250  nm period grating transferred by proximity i-line mask-aligner lithography

Yannick Bourgin, Thomas Käsebier, and Uwe D. Zeitner  »View Author Affiliations


Optics Letters, Vol. 39, Issue 6, pp. 1665-1668 (2014)
http://dx.doi.org/10.1364/OL.39.001665


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Abstract

This Letter, describes a fabrication method based on a high refractive index binary phase mask combined with a suitable illumination setup, which produces a close to normal incidence illumination, to fabricate sub-micrometer diffraction gratings. The method uses the i-line (365 nm) of a mercury lamp spectrum in a mask-aligner in proximity mode, to avoid any contact between the mask and the wafer, which is normally used to produce high resolution structures. The transfer of the structure in a fused silica wafer demonstrates that mask-aligner lithography can produce high aspect ratio sub-wavelength structures without resorting to any contact between mask and wafer.

© 2014 Optical Society of America

OCIS Codes
(050.1950) Diffraction and gratings : Diffraction gratings
(220.3740) Optical design and fabrication : Lithography
(220.2945) Optical design and fabrication : Illumination design
(220.4241) Optical design and fabrication : Nanostructure fabrication
(050.6624) Diffraction and gratings : Subwavelength structures

ToC Category:
Optical Design and Fabrication

History
Original Manuscript: December 2, 2013
Revised Manuscript: January 17, 2014
Manuscript Accepted: February 2, 2014
Published: March 14, 2014

Citation
Yannick Bourgin, Thomas Käsebier, and Uwe D. Zeitner, "250  nm period grating transferred by proximity i-line mask-aligner lithography," Opt. Lett. 39, 1665-1668 (2014)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-39-6-1665


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