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Optics Letters

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  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 7 — Apr. 1, 2014
  • pp: 1799–1802

High RF carrier frequency modulation in silicon resonators by coupling adjacent free-spectral-range modes

Lawrence D. Tzuang, Mohammad Soltani, Yoon Ho Daniel Lee, and Michal Lipson  »View Author Affiliations


Optics Letters, Vol. 39, Issue 7, pp. 1799-1802 (2014)
http://dx.doi.org/10.1364/OL.39.001799


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Abstract

We demonstrate the modulation of silicon ring resonators at RF carrier frequencies higher than the resonance linewidth by coupling adjacent free-spectral-range (FSR) resonance modes. In this modulator scheme, the modulation frequency is matched to the FSR frequency. As an example, we demonstrate a 20 GHz modulation in a silicon ring with a resonance linewidth of only 11.7 GHz. We show theoretically that this modulator scheme has lower power consumption compared to a standard silicon ring modulator at high carrier frequencies. These results could enable future on-chip high-frequency analog communication and photonic signal processing on a silicon photonics platform.

© 2014 Optical Society of America

OCIS Codes
(230.5750) Optical devices : Resonators
(250.4110) Optoelectronics : Modulators

ToC Category:
Optical Devices

History
Original Manuscript: September 17, 2013
Revised Manuscript: February 4, 2014
Manuscript Accepted: February 14, 2014
Published: March 19, 2014

Citation
Lawrence D. Tzuang, Mohammad Soltani, Yoon Ho Daniel Lee, and Michal Lipson, "High RF carrier frequency modulation in silicon resonators by coupling adjacent free-spectral-range modes," Opt. Lett. 39, 1799-1802 (2014)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-39-7-1799


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