We demonstrate the modulation of silicon ring resonators at RF carrier frequencies higher than the resonance linewidth by coupling adjacent free-spectral-range (FSR) resonance modes. In this modulator scheme, the modulation frequency is matched to the FSR frequency. As an example, we demonstrate a 20 GHz modulation in a silicon ring with a resonance linewidth of only 11.7 GHz. We show theoretically that this modulator scheme has lower power consumption compared to a standard silicon ring modulator at high carrier frequencies. These results could enable future on-chip high-frequency analog communication and photonic signal processing on a silicon photonics platform.
© 2014 Optical Society of America
Original Manuscript: September 17, 2013
Revised Manuscript: February 4, 2014
Manuscript Accepted: February 14, 2014
Published: March 19, 2014
Lawrence D. Tzuang, Mohammad Soltani, Yoon Ho Daniel Lee, and Michal Lipson, "High RF carrier frequency modulation in silicon resonators by coupling adjacent free-spectral-range modes," Opt. Lett. 39, 1799-1802 (2014)