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Optics Letters

Optics Letters


  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 8 — Apr. 15, 2014
  • pp: 2382–2385

Ablation area quasiperiodic oscillations in semiconductors with femtosecond laser double-pulse delay

Xin Li, Cong Li, Lan Jiang, Xuesong Shi, Ning Zhang, and Yongfeng Lu  »View Author Affiliations

Optics Letters, Vol. 39, Issue 8, pp. 2382-2385 (2014)

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A surprising repeatable phenomenon regarding semiconductor ablation area changes has been discovered. Irradiated by femtosecond double pulses, the ablation area quasiperiodically oscillates as the pulse delay increases from 0 to 1 ps at a material-dependent fluence range. In contrast, the ablation area monotonically decreases as the pulse delay increases beyond 1 ps or if the total fluence increases close to or beyond the single-shot threshold. Similar unexpected patterns of area quasiperiodic oscillations with the double-pulse delay are observed in various semiconductors, including Ge, Si, GaAs, and ZnO. The comparison study shows the same phenomenon in Au-plated ZnO. Yet, its oscillation periods are shorter and more stable than those in bulk ZnO, which implies that the localized carrier density is the key factor in oscillation periods.

© 2014 Optical Society of America

OCIS Codes
(140.3330) Lasers and laser optics : Laser damage
(320.2250) Ultrafast optics : Femtosecond phenomena
(320.5540) Ultrafast optics : Pulse shaping
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Ultrafast Optics

Original Manuscript: December 20, 2013
Revised Manuscript: March 4, 2014
Manuscript Accepted: March 16, 2014
Published: April 9, 2014

Xin Li, Cong Li, Lan Jiang, Xuesong Shi, Ning Zhang, and Yongfeng Lu, "Ablation area quasiperiodic oscillations in semiconductors with femtosecond laser double-pulse delay," Opt. Lett. 39, 2382-2385 (2014)

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