A reflection-enhanced dual-absorption InP-PIN/GaAs-DBR photodetector was fabricated and characterized. The photodetector is monolithically integrated using a heteroepitaxy growth of an InGaAs/InP dual-absorption “PINIP” structure on the GaAs/AlGaAs Bragg reflectors. These features lead to an increase in quantum efficiency over a wide wavelength range while maintaining a high speed. The measured quantum efficiency was increased by 48.8% in comparison with that without reflectors. A quantum efficiency of 64% at a wavelength of 1522 nm and a 3 dB bandwidth of 26 GHz at a reverse bias of 3 V were simultaneously obtained in the device.
© 2014 Optical Society of America
Original Manuscript: February 20, 2014
Revised Manuscript: March 13, 2014
Manuscript Accepted: March 17, 2014
Published: April 11, 2014
Xiaofeng Duan, Yongqing Huang, Yufeng Shang, Jun Wang, and Xiaomin Ren, "High-efficiency dual-absorption InGaAs/InP photodetector incorporating GaAs/AlGaAs Bragg reflectors," Opt. Lett. 39, 2447-2450 (2014)