Abstract
A reflection-enhanced dual-absorption InP-PIN/GaAs-DBR photodetector was fabricated and characterized. The photodetector is monolithically integrated using a heteroepitaxy growth of an InGaAs/InP dual-absorption “PINIP” structure on the GaAs/AlGaAs Bragg reflectors. These features lead to an increase in quantum efficiency over a wide wavelength range while maintaining a high speed. The measured quantum efficiency was increased by 48.8% in comparison with that without reflectors. A quantum efficiency of 64% at a wavelength of 1522 nm and a 3 dB bandwidth of 26 GHz at a reverse bias of 3 V were simultaneously obtained in the device.
© 2014 Optical Society of America
Full Article | PDF ArticleMore Like This
Yuxuan Wang, Guanyu Li, Xiaowen Gu, Yuechan Kong, Youdou Zheng, and Yi Shi
Opt. Express 30(4) 4919-4929 (2022)
Xiaofeng Duan, Yongqing Huang, Xiaomin Ren, Hui Huang, Sanxian Xie, Qi Wang, and Shiwei Cai
Opt. Express 18(6) 5879-5889 (2010)
Ali K. Okyay, Ammar M. Nayfeh, Krishna C. Saraswat, Takao Yonehara, Ann Marshall, and Paul C. McIntyre
Opt. Lett. 31(17) 2565-2567 (2006)