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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Xi-Cheng Zhang
  • Vol. 39, Iss. 8 — Apr. 15, 2014
  • pp: 2483–2486

Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering

Zi-Hui Zhang, Zhengang Ju, Wei Liu, Swee Tiam Tan, Yun Ji, Zabu Kyaw, Xueliang Zhang, Namig Hasanov, Xiao Wei Sun, and Hilmi Volkan Demir  »View Author Affiliations


Optics Letters, Vol. 39, Issue 8, pp. 2483-2486 (2014)
http://dx.doi.org/10.1364/OL.39.002483


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Abstract

The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancement of hole injection efficiency by manipulating the hole transport mechanism through insertion of a thin GaN layer of 1 nm into the p-AlGaN EBL and propose an AlGaN/GaN/AlGaN-type EBL outperforming conventional AlGaN EBLs. Here, the position of the inserted thin GaN layer relative to the p-GaN region is found to be the key to enhancing the hole injection efficiency. InGaN/GaN LEDs with the proposed p-type AlGaN/GaN/AlGaN EBL have demonstrated substantially higher optical output power and external quantum efficiency.

© 2014 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

History
Original Manuscript: January 14, 2014
Manuscript Accepted: March 11, 2014
Published: April 14, 2014

Citation
Zi-Hui Zhang, Zhengang Ju, Wei Liu, Swee Tiam Tan, Yun Ji, Zabu Kyaw, Xueliang Zhang, Namig Hasanov, Xiao Wei Sun, and Hilmi Volkan Demir, "Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering," Opt. Lett. 39, 2483-2486 (2014)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-39-8-2483

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