Abstract
Single-photon avalanche diodes (SPADs) have been fabricated on Si using PureB (Pure Boron) chemical-vapor deposition (CVD) to create both a nanometer-thin anode junction and a robust front-entrance window. The device shows high sensitivity to low radiation levels of electrons with energies down to 200 eV when measurements are performed at room temperature where the dark count rate can be as low as 10 Hz. An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied, and this gives a very uniform sensitivity across the whole front-entrance window.
© 2015 Optical Society of America
Full Article | PDF ArticleMore Like This
Bo-Wei Tzou, Jau-Yang Wu, Yi-Shan Lee, and Sheng-Di Lin
Opt. Lett. 40(16) 3774-3777 (2015)
Jishen Zhang, Haibo Wang, Gong Zhang, Kian Hua Tan, Satrio Wicaksono, Haiwen Xu, Chao Wang, Yue Chen, Yan Liang, Charles Ci Wen Lim, Soon-Fatt Yoon, and Xiao Gong
Opt. Lett. 46(11) 2670-2673 (2021)
Myung-Jae Lee, Pengfei Sun, and Edoardo Charbon
Opt. Express 23(10) 13200-13209 (2015)