We have observed beam coupling and degenerate four-wave mixing in high-resistivity, undoped GaAs at 1.06 µm that is due to the photorefractive effect. The photorefractive species is thought to be the deep donor EL2. The measured values of two-wave gain are comparable with those measured in Bi12SiO20. The response time is measured to be 20 µsec at an intensity of 4 W/cm2. This exceptionally fast photorefractive response time (compared with that of oxide electro-optic materials) is due primarily to the large mobility of GaAs.
© 1984 Optical Society of America
M. B. Klein, "Beam coupling in undoped GaAs at 1.06 µm using the photorefractive effect," Opt. Lett. 9, 350-352 (1984)