We have observed beam coupling and degenerate four-wave mixing in high-resistivity, undoped GaAs at 1.06 μm that is due to the photorefractive effect. The photorefractive species is thought to be the deep donor EL2. The measured values of two-wave gain are comparable with those measured in Bi12SiO20. The response time is measured to be 20 μsec at an intensity of 4 W/cm2. This exceptionally fast photorefractive response time (compared with that of oxide electro-optic materials) is due primarily to the large mobility of GaAs.
© 1984 Optical Society of America
Original Manuscript: March 19, 1984
Manuscript Accepted: May 21, 1984
Published: August 1, 1984
M. B. Klein, "Beam coupling in undoped GaAs at 1.06 μm using the photorefractive effect," Opt. Lett. 9, 350-352 (1984)