Beam coupling in undoped GaAs at 1.06 µm using the photorefractive effect
Optics Letters, Vol. 9, Issue 8, pp. 350-352 (1984)
http://dx.doi.org/10.1364/OL.9.000350
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Abstract
We have observed beam coupling and degenerate four-wave mixing in high-resistivity, undoped GaAs at 1.06 µm that is due to the photorefractive effect. The photorefractive species is thought to be the deep donor EL2. The measured values of two-wave gain are comparable with those measured in Bi12SiO20. The response time is measured to be 20 µsec at an intensity of 4 W/cm2. This exceptionally fast photorefractive response time (compared with that of oxide electro-optic materials) is due primarily to the large mobility of GaAs.
© 1984 Optical Society of America
Citation
M. B. Klein, "Beam coupling in undoped GaAs at 1.06 µm using the photorefractive effect," Opt. Lett. 9, 350-352 (1984)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-9-8-350
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