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Optics Letters

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  • Vol. 9, Iss. 8 — Aug. 1, 1984
  • pp: 350–352

Beam coupling in undoped GaAs at 1.06 μm using the photorefractive effect

M. B. Klein  »View Author Affiliations


Optics Letters, Vol. 9, Issue 8, pp. 350-352 (1984)
http://dx.doi.org/10.1364/OL.9.000350


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Abstract

We have observed beam coupling and degenerate four-wave mixing in high-resistivity, undoped GaAs at 1.06 μm that is due to the photorefractive effect. The photorefractive species is thought to be the deep donor EL2. The measured values of two-wave gain are comparable with those measured in Bi12SiO20. The response time is measured to be 20 μsec at an intensity of 4 W/cm2. This exceptionally fast photorefractive response time (compared with that of oxide electro-optic materials) is due primarily to the large mobility of GaAs.

© 1984 Optical Society of America

History
Original Manuscript: March 19, 1984
Manuscript Accepted: May 21, 1984
Published: August 1, 1984

Citation
M. B. Klein, "Beam coupling in undoped GaAs at 1.06 μm using the photorefractive effect," Opt. Lett. 9, 350-352 (1984)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-9-8-350


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References

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