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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 1, Iss. 8 — Dec. 1, 2011
  • pp: 1555–1560

Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

C. W. Chen, S. C. Hung, C. H. Lee, C. J. Tun, C. H. Kuo, M. D. Yang, C. W. Yeh, C. H. Wu, and G. C. Chi  »View Author Affiliations


Optical Materials Express, Vol. 1, Issue 8, pp. 1555-1560 (2011)
http://dx.doi.org/10.1364/OME.1.001555


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Abstract

Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO2(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (Vf) of 6V with a series resistance of 2.2 × 105 Ω.

© 2011 OSA

OCIS Codes
(000.2190) General : Experimental physics
(160.2220) Materials : Defect-center materials

ToC Category:
Semiconductors

History
Original Manuscript: September 7, 2011
Revised Manuscript: November 3, 2011
Manuscript Accepted: November 3, 2011
Published: November 16, 2011

Citation
C. W. Chen, S. C. Hung, C. H. Lee, C. J. Tun, C. H. Kuo, M. D. Yang, C. W. Yeh, C. H. Wu, and G. C. Chi, "Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure," Opt. Mater. Express 1, 1555-1560 (2011)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-1-8-1555


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