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Synthesis and characterization of white light emitting CaxSr1-xAl2O4:Tb3+,Eu3+ phosphor for solid state lightingSamy K. K. Shaat, Hendrik C. Swart, and Odireleng M. Ntwaeaborwa »View Author Affiliations
Samy K. K. Shaat,1,2
Hendrik C. Swart,1
and Odireleng M. Ntwaeaborwa1,*
1Department of Physics, University of the Free State, Bloemfontein, ZA9300, South Africa 2Department of Physics, Islamic University, Gaza, P.O. Box 108, Gaza, Palestine *Corresponding author: ntwaeab@ufs.ac.za |
Optical Materials Express, Vol. 2, Issue 7, pp. 962-968 (2012)
http://dx.doi.org/10.1364/OME.2.000962
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Abstract
A white light emitting CaxSr1-xAl2O4:Tb3+;Eu3+ phosphor was synthesized by a combustion method using metal nitrates as precursors and urea as a fuel. The X-ray diffraction patterns from the samples showed phases associated with monoclinic structures of CaAl2O4 and SrAl2O4. White photoluminescence with the CIE coordinates (x = 0.343, y = 0.325) was observed when the phosphor was optically-excited at 227 nm using a monochromatized xenon lamp. The white photoluminescence was a result of the combination of blue and green line emissions from Tb3+, and red line emission from Eu3+. The structure and photoluminescence properties of this phosphor are reported.
© 2012 OSA
OCIS Codes
(160.5690) Materials : Rare-earth-doped materials
(250.5230) Optoelectronics : Photoluminescence
(160.4236) Materials : Nanomaterials
ToC Category:
Materials
History
Original Manuscript: June 1, 2012
Revised Manuscript: June 17, 2012
Manuscript Accepted: June 20, 2012
Published: June 21, 2012
Citation
Samy K. K. Shaat, Hendrik C. Swart, and Odireleng M. Ntwaeaborwa, "Synthesis and characterization of white light emitting CaxSr1-xAl2O4:Tb3+,Eu3+ phosphor for solid state lighting," Opt. Mater. Express 2, 962-968 (2012)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-2-7-962
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References
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- R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012). [CrossRef]
- P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008). [CrossRef]
- R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010). [CrossRef]
- R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012). [CrossRef]
- E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012). [CrossRef]
- D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012). [CrossRef] [PubMed]
- T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto, “Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface,” Adv. Mater., doi:. [CrossRef]
- D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012). [CrossRef] [PubMed]
- C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009). [CrossRef]
- X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012). [CrossRef]
- Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009). [CrossRef]
- J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004). [CrossRef]
- Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009). [CrossRef]
- S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999). [CrossRef]
- Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 251112 (2011). [CrossRef]
- J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004). [CrossRef]
- J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004). [CrossRef]
- S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999). [CrossRef]
- J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004). [CrossRef]
- S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999). [CrossRef]
- T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto, “Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface,” Adv. Mater., doi:. [CrossRef]
- D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012). [CrossRef] [PubMed]
- D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012). [CrossRef] [PubMed]
- C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009). [CrossRef]
- D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012). [CrossRef] [PubMed]
- D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012). [CrossRef] [PubMed]
- C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009). [CrossRef]
- H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011). [CrossRef] [PubMed]
- H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett.97(13), 131114 (2010). [CrossRef]
- A. Potdevin, G. Chadeyron, D. Boyer, B. Caillier, and R. Mahiou, “Sol–gel based YAG:Tb3+ or Eu3+ phosphors for application in lighting sources,” J. Phys. D.38(17), 3251–3260 (2005). [CrossRef]
- R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010). [CrossRef]
- S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999). [CrossRef]
- E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012). [CrossRef]
- E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012). [CrossRef]
- J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004). [CrossRef]
- S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999). [CrossRef]
- J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004). [CrossRef]
- D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012). [CrossRef] [PubMed]
- A. Potdevin, G. Chadeyron, D. Boyer, B. Caillier, and R. Mahiou, “Sol–gel based YAG:Tb3+ or Eu3+ phosphors for application in lighting sources,” J. Phys. D.38(17), 3251–3260 (2005). [CrossRef]
- X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012). [CrossRef]
- X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012). [CrossRef]
- D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012). [CrossRef] [PubMed]
- E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012). [CrossRef]
- Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009). [CrossRef]
- R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012). [CrossRef]
- R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010). [CrossRef]
- Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 251112 (2011). [CrossRef]
- J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(17), 171111 (2011). [CrossRef]
- H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011). [CrossRef] [PubMed]
- H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett.97(13), 131114 (2010). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010). [CrossRef]
- D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012). [CrossRef] [PubMed]
- D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012). [CrossRef] [PubMed]
- S. Fan, C. Yu, D. He, X. Wang, and L. Hu, “Tunable white light emission from γ-irradiated Ag/Eu co-doped phosphate glass phosphor,” Opt. Mater. Express2(6), 765–770 (2012). [CrossRef]
- P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008). [CrossRef]
- C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009). [CrossRef]
- X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012). [CrossRef]
- R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012). [CrossRef]
- T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto, “Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface,” Adv. Mater., doi:. [CrossRef]
- Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009). [CrossRef]
- D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012). [CrossRef] [PubMed]
- X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012). [CrossRef]
- X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012). [CrossRef]
- E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012). [CrossRef]
- Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009). [CrossRef]
- R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012). [CrossRef]
- E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012). [CrossRef]
- Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(17), 171111 (2011). [CrossRef]
- J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011). [CrossRef]
- H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011). [CrossRef] [PubMed]
- J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010). [CrossRef]
- E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012). [CrossRef]
- D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012). [CrossRef] [PubMed]
- P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(17), 171111 (2011). [CrossRef]
- H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011). [CrossRef] [PubMed]
- J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010). [CrossRef]
- H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett.97(13), 131114 (2010). [CrossRef]
- P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008). [CrossRef]
- E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012). [CrossRef]
- P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008). [CrossRef]
- P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008). [CrossRef]
- P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008). [CrossRef]
Adv. Mater.
- T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto, “Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface,” Adv. Mater., doi:. [CrossRef]
Appl. Phys. Lett.
- J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(17), 171111 (2011). [CrossRef]
- Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 251112 (2011). [CrossRef]
- E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012). [CrossRef]
- Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009). [CrossRef]
- J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004). [CrossRef]
- H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett.97(13), 131114 (2010). [CrossRef]
Dalton Trans.
- D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012). [CrossRef] [PubMed]
J. Alloy. Comp.
- C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009). [CrossRef]
J. Appl. Phys.
- J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011). [CrossRef]
J. Colloid Interface Sci.
- D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012). [CrossRef] [PubMed]
J. Mater. Chem.
- X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012). [CrossRef]
J. Mater. Res.
- R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010). [CrossRef]
J. Phys. D.
- A. Potdevin, G. Chadeyron, D. Boyer, B. Caillier, and R. Mahiou, “Sol–gel based YAG:Tb3+ or Eu3+ phosphors for application in lighting sources,” J. Phys. D.38(17), 3251–3260 (2005). [CrossRef]
Mater. Res. Bull.
- S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999). [CrossRef]
Opt. Express
- H.-C. Kuo, C.-W. Hung, H.-C. Chen, K.-J. Chen, C.-H. Wang, C.-W. Sher, C.-C. Yeh, C.-C. Lin, C.-H. Chen, and Y.-J. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express19(S4Suppl 4), A930–A936 (2011). [CrossRef] [PubMed]
- H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011). [CrossRef] [PubMed]
- C. Wetzel and T. Detchprohm, “Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency,” Opt. Express19(S4Suppl 4), A962–A971 (2011). [CrossRef] [PubMed]
Opt. Mater.
- P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008). [CrossRef]
Opt. Mater. Express
- S. Fan, C. Yu, D. He, X. Wang, and L. Hu, “Tunable white light emission from γ-irradiated Ag/Eu co-doped phosphate glass phosphor,” Opt. Mater. Express2(6), 765–770 (2012). [CrossRef]
Semicond. Sci. Technol.
- R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012). [CrossRef]
2012, Farrell, Semicond. Sci. Technol.
- R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012). [CrossRef]
- E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012). [CrossRef]
- X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012). [CrossRef]
- D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012). [CrossRef] [PubMed]
- D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012). [CrossRef] [PubMed]
- J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(17), 171111 (2011). [CrossRef]
- Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 251112 (2011). [CrossRef]
- J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010). [CrossRef]
- H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett.97(13), 131114 (2010). [CrossRef]
- R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010). [CrossRef]
- C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009). [CrossRef]
- Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009). [CrossRef]
- P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008). [CrossRef]
- A. Potdevin, G. Chadeyron, D. Boyer, B. Caillier, and R. Mahiou, “Sol–gel based YAG:Tb3+ or Eu3+ phosphors for application in lighting sources,” J. Phys. D.38(17), 3251–3260 (2005). [CrossRef]
- J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004). [CrossRef]
- S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999). [CrossRef]
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