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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 3, Iss. 1 — Jan. 1, 2013
  • pp: 86–94

Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching

Yiyu Ou, Imran Aijaz, Valdas Jokubavicius, Rositza Yakimova, Mikael Syväjärvi, and Haiyan Ou  »View Author Affiliations

Optical Materials Express, Vol. 3, Issue 1, pp. 86-94 (2013)

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An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated. The nanopatterning process is more time-efficiency than the e-beam lithography or nanoimprint lithography process. The influences of the reactive-ion etching conditions and deposited Au film thickness to the subwavelength structure profile and its corresponding surface reflectance have been systematically investigated. Under the optimal experimental conditions, the average reflectance of the silicon carbide in the range of 390–784 nm is dramatically suppressed from 21.0% to 1.9% after introducing the pseudoperiodic nanostructures. A luminescence enhancement of 226% was achieved at an emission angle of 20° on the fluorescent silicon carbide. Meanwhile, the angle-resolved photoluminescence study presents a considerable omnidirectional luminescence enhancement.

© 2012 OSA

OCIS Codes
(250.5230) Optoelectronics : Photoluminescence
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6628) Thin films : Subwavelength structures, nanostructures

ToC Category:

Original Manuscript: December 4, 2012
Revised Manuscript: December 12, 2012
Manuscript Accepted: December 12, 2012
Published: December 19, 2012

Yiyu Ou, Imran Aijaz, Valdas Jokubavicius, Rositza Yakimova, Mikael Syväjärvi, and Haiyan Ou, "Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching," Opt. Mater. Express 3, 86-94 (2013)

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