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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 3, Iss. 8 — Aug. 1, 2013
  • pp: 1020–1025

Terahertz metamaterial absorbers with an embedded resistive layer

Brian Kearney, Fabio Alves, Dragoslav Grbovic, and Gamani Karunasiri  »View Author Affiliations

Optical Materials Express, Vol. 3, Issue 8, pp. 1020-1025 (2013)

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A conductive layer of Ti, with a sheet resistance of about 220 Ω/sq, was placed in the dielectric spacer of an Al/SiOx/Al metamaterial terahertz absorber at various depths to probe the effect on the absorption of terahertz radiation. For a square size of 15 µm and a periodicity of 21 µm, and dielectric thickness approximately 1.6 µm, maximum absorption was 60%, 88%, and 94% for Ti layers 297, 765, and 1270 nm deep into the SiOx. Finite element simulations of the absorption correlated well with that of the measurements. This indicates that metamaterials with an embedded high temperature coefficient of resistance (TCR) conducting layer can be used for fabrication of microbolometers with tuned spectral sensitivity.

© 2013 OSA

OCIS Codes
(040.2235) Detectors : Far infrared or terahertz
(310.3915) Thin films : Metallic, opaque, and absorbing coatings
(160.3918) Materials : Metamaterials

ToC Category:

Original Manuscript: April 22, 2013
Revised Manuscript: June 3, 2013
Manuscript Accepted: June 5, 2013
Published: July 2, 2013

Brian Kearney, Fabio Alves, Dragoslav Grbovic, and Gamani Karunasiri, "Terahertz metamaterial absorbers with an embedded resistive layer," Opt. Mater. Express 3, 1020-1025 (2013)

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