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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 4, Iss. 1 — Jan. 1, 2014
  • pp: 43–56

Investigation into inhomogeneous electrical and optical properties of indium tin oxide film using spectroscopic ellipsometry with multi-layer optical models

Kun-San Tseng and Yu-Lung Lo  »View Author Affiliations

Optical Materials Express, Vol. 4, Issue 1, pp. 43-56 (2014)

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Indium tin oxide (ITO) films with various thicknesses are deposited on glass substrates using a DC magnetron sputtering technique. The microstructure and chemical composition of the sputtered samples are examined by scanning electron microscopy (SEM), X-Ray Diffraction (XRD) and Energy Dispersive X-Ray Spectroscopy (EDS). Two-layer and three-layer optical models of the sputtered ITO films are constructed for fitting the experimental results of the spectroscopic ellipsometry. The results obtained from the two models for the resistivity, carrier density and carrier mobility are compared with those obtained via Hall effect measurements. Finally, the three-layer optical model is used to evaluate the refractive index and extinction coefficient spectra of the various samples. In general, the present results show that the three-layer model, in which the transition layer between the ITO film and the glass substrate is included, provides a better approximation of the SE results than the two-layer model. However, both models yield a reasonable estimate of the Hall resistivity. The results obtained using the three-layer model show that the carrier density and carrier mobility in the bulk layer are lower and higher, respectively, than those in the transition layer. In addition, it is shown that the refractive index of the bulk layer is lower than that of the transition layer in the UV and visible spectrum. Moreover, the extinction coefficient of the transition layer is significantly higher than that of the bulk layer in the near IR-region.

© 2013 Optical Society of America

OCIS Codes
(120.0120) Instrumentation, measurement, and metrology : Instrumentation, measurement, and metrology
(310.7005) Thin films : Transparent conductive coatings

ToC Category:
Transparent Conductive Coatings

Original Manuscript: November 18, 2013
Revised Manuscript: November 26, 2013
Manuscript Accepted: November 26, 2013
Published: December 9, 2013

Kun-San Tseng and Yu-Lung Lo, "Investigation into inhomogeneous electrical and optical properties of indium tin oxide film using spectroscopic ellipsometry with multi-layer optical models," Opt. Mater. Express 4, 43-56 (2014)

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  1. I. Hamberg and C. G. Granqvist, “Evaporated Sn-doped In2O3 films: Basic optical properties and application to energy-efficient windows,” J. Appl. Phys.60(11), R123–R160 (1986). [CrossRef]
  2. R. B. H. Tahar, T. Ban, Y. Ohya, and Y. Takahashi, “Tin doped indium oxide thin films: Electrical properties,” J. Appl. Phys.83(5), 2631–2645 (1998). [CrossRef]
  3. A. N. Banerjee and K. K. Chattopadhyay, “Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films,” Prog. Cryst. Growth Ch.50(1-3), 52–105 (2005). [CrossRef]
  4. H. Kim, C. M. Gilmore, A. Pique´, J. S. Horwitz, H. Mattoussi, H. Murata, Z. H. Kafafi, and D. B. Chrisey, “Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices,” J. Appl. Phys.86(11), 6451–6461 (1999). [CrossRef]
  5. Y. S. Jung, “Spectroscopic ellipsometry studies on the optical constants of indium tin oxide films deposited under various sputtering conditions,” Thin Solid Films467(1-2), 36–42 (2004). [CrossRef]
  6. M. Hoheisel, A. Mitwalsky, and C. Mrotzek, “Microsturcture and Etching Properties of Sputtered Indium-Tin Oxide (ITO),” Phys. Status Solidi123(2), 461–472 (1991). [CrossRef]
  7. A. I. Rogozin, M. V. Vinnichenko, A. Kolitsch, and W. Moller, “Effect of deposition parameters on properties of ITO films prepared by reactive middle frequency pulsed dual magnetron sputtering,” J. Vac. Sci. Technol.22(2), 349–355 (2004). [CrossRef]
  8. M. Dudek, A. Amassian, O. Zabeida, J. E. Klemberg-Sapieha, and L. Martinu, “Ion bombardment-induced enhancement of the properties of indium tin oxide films prepared by plasma-assisted reactive magnetron sputtering,” Thin Solid Films517(16), 4576–4582 (2009). [CrossRef]
  9. M. Losurdo, M. Giangregorio, P. Capezzuto, G. Bruno, R. De Rosa, F. Roca, C. Summonte, J. Plá, and R. Rizzoli, “Parameterization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity,” J. Vac. Sci. Technol. A20(1), 37–42 (2002). [CrossRef]
  10. S. D’Elia, N. Scaramuzza, F. Ciuchi, C. Versace, G. Strangi, and R. Bartolino, “Ellipsometry investigation of the effects of annealing temperature on the optical properties of indium tin oxide thin films studied by Drude–Lorentz model,” Appl. Surf. Sci.255(16), 7203–7211 (2009). [CrossRef]
  11. R. A. Synowicki, “Spectroscopic ellipsometry characterization of indium tin oxide film microstructure and optical constants,” Thin Solid Films313–314, 394–397 (1998). [CrossRef]
  12. Y. H. Fujiwara and M. Kondo, “Effects of carrier concentration on the dielectric function of ZnO:Ga and In2O3: Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption,” Phys. Rev. B71(7), 075109 (2005). [CrossRef]
  13. H. Fujiwara, Spectroscopic Ellipsometry - Principle and Application (John Wiley and Sons, 2006), Chap. 4.
  14. Z. Qiao, R. Latz, and D. Mergal, “Thickness dependence of In2O3: Sn film growth,” Thin Solid Films446(1-2), 250–258 (2004). [CrossRef]
  15. S. H. Brewer and S. Franzen, “Calculation of the electronic and optical properties of indium tin oxide by density functional theory,” Chem. Phys.300(1-3), 285–293 (2004). [CrossRef]
  16. H. D. Liu, Y. P. Zhao, G. Ramantath, S. P. Mruarka, and G. C. Wang, “Thickness dependent electrical resistivity of ultrathin (<40nm) Cu films,” Thin Solid Films384(1), 151–156 (2001). [CrossRef]
  17. S. Z. Tehrani, W. L. Lim, and L. Lee, “Correction factors for films resistivity measurement,” Measurement45(3), 219–225 (2012). [CrossRef]
  18. R. Clanget, “Ionized impurity scattering in degenerate In2O3,” Appl. Phys. (Berl.)2(5), 247–256 (1973). [CrossRef]
  19. K. Ellmer and R. Mientus, “Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide,” Thin Solid Films516(14), 4620–4627 (2008). [CrossRef]
  20. Y. Shigesato, R. Koshi-ishi, T. Kawashima, and J. Ohsako, “Early stages of ITO deposition on glass or polymer substrates,” Vacuum59(2-3), 614–621 (2000). [CrossRef]
  21. E. Nishimura, T. Sasabayashi, N. Ito, Y. Sato, K. Utsumi, K. Yano, A. Kaijo, K. Inoue, and Y. Shigesato, “Structure and internal stress of tin-doped indium oxide and indium-zinc oxide films deposited by DC magnetron sputtering,” Jpn. J. Appl. Phys.46(12), 7806–7811 (2007). [CrossRef]
  22. C. C. Lee, J. C. Hsu, and D. H. Wong, “The characteristics of some metallic oxides prepared in high vacuum by ion beam sputtering,” Appl. Surf. Sci.171(1-2), 151–156 (2001). [CrossRef]
  23. M. Losurdo, D. Barreca, P. Capezzuto, G. Bruno, and E. Tondello, “Interrelation between nanostructure and optical properties of oxide thin films by spectroscopic ellipsometry,” Surf. Coat. Tech.151–152, 2–8 (2002). [CrossRef]

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