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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 1, Iss. 5 — Sep. 1, 2011
  • pp: 856–865

Low-temperature germanium thin films on silicon

Vito Sorianello, Lorenzo Colace, Nicola Armani, Francesca Rossi, Claudio Ferrari, Laura Lazzarini, and Gaetano Assanto  »View Author Affiliations

Optical Materials Express, Vol. 1, Issue 5, pp. 856-865 (2011)

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We discuss thermal evaporation of Germanium thin films as a suitable route to realizing near-infrared detectors integrated on a Silicon platform. We study the structural properties of samples grown at various substrate temperatures by X-ray diffraction and transmission electron microscopy, showing that Ge thin films are amorphous when deposited below 225°C, mono-crystalline between 225 and 400°C, poly-crystalline above 450°C. We further investigate their optical and electrical properties using differential optical absorption spectroscopy, Hall and photocurrent measurements. Finally, with the evaporated Ge thin films we demonstrate near-infrared photodiodes with low dark current density and good responsivity at 1.55 μm.

© 2011 OSA

OCIS Codes
(160.1890) Materials : Detector materials
(160.6000) Materials : Semiconductor materials
(310.1860) Thin films : Deposition and fabrication
(310.3840) Thin films : Materials and process characterization

ToC Category:

Original Manuscript: June 13, 2011
Revised Manuscript: July 20, 2011
Manuscript Accepted: August 3, 2011
Published: August 5, 2011

Vito Sorianello, Lorenzo Colace, Nicola Armani, Francesca Rossi, Claudio Ferrari, Laura Lazzarini, and Gaetano Assanto, "Low-temperature germanium thin films on silicon," Opt. Mater. Express 1, 856-865 (2011)

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