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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 1, Iss. 6 — Oct. 1, 2011
  • pp: 1121–1126

Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics

J. Raja Jain, Dany-Sebastien Ly-Gagnon, Krishna C. Balram, Justin S. White, Mark L. Brongersma, David A. B. Miller, and Roger T. Howe  »View Author Affiliations

Optical Materials Express, Vol. 1, Issue 6, pp. 1121-1126 (2011)

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We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelectronic device fabrication. Crystal quality is assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device manufacturing is demonstrated through fabrication and characterization of metal–semiconductor–metal photodetectors that exhibit photoresponse beyond 1.55 μm. The substrate fabrication process is compatible with complementary metal–oxide–semiconductor manufacturing and represents a potential route to wafer-scale integration of silicon-compatible optoelectronics.

© 2011 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(130.0250) Integrated optics : Optoelectronics
(160.4670) Materials : Optical materials

ToC Category:

Original Manuscript: August 4, 2011
Revised Manuscript: September 10, 2011
Manuscript Accepted: September 12, 2011
Published: September 16, 2011

J. Raja Jain, Dany-Sebastien Ly-Gagnon, Krishna C. Balram, Justin S. White, Mark L. Brongersma, David A. B. Miller, and Roger T. Howe, "Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics," Opt. Mater. Express 1, 1121-1126 (2011)

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