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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 1, Iss. 7 — Nov. 1, 2011
  • pp: 1165–1177

Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices

André Fekecs, Maxime Bernier, Denis Morris, Martin Chicoine, François Schiettekatte, Paul Charette, and Richard Arès  »View Author Affiliations

Optical Materials Express, Vol. 1, Issue 7, pp. 1165-1177 (2011)

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A multiple-energy, high fluence, MeV Fe ion implantation process was applied at 83 K to heavily damage a low band gap (0.79 eV) epitaxial InGaAsP layer. Optimal rapid thermal annealing conditions were found and produced a fast photoconductor with high resistivity (up to 2500 Ωcm) and Hall mobility around 400 cm2V−1s−1. Short photocarrier trapping times (0.3 ps – 3 ps) were observed via transient differential reflectivity measurements. Furthermore, photoconductive terahertz devices with coplanar electrodes were fabricated and validated. Under pulsed excitation with a 1550 nm femtosecond fiber laser source, antennas based on Fe-implanted InGaAsP are able to emit broadband radiation exceeding 2 THz. Given such specifications, this new material qualifies as a worthy candidate for an integration into optical terahertz spectrometer designs.

© 2011 OSA

OCIS Codes
(160.5140) Materials : Photoconductive materials
(160.6000) Materials : Semiconductor materials
(320.7080) Ultrafast optics : Ultrafast devices
(320.7100) Ultrafast optics : Ultrafast measurements
(300.6495) Spectroscopy : Spectroscopy, teraherz

ToC Category:

Original Manuscript: September 2, 2011
Revised Manuscript: September 27, 2011
Manuscript Accepted: September 29, 2011
Published: October 5, 2011

André Fekecs, Maxime Bernier, Denis Morris, Martin Chicoine, François Schiettekatte, Paul Charette, and Richard Arès, "Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices," Opt. Mater. Express 1, 1165-1177 (2011)

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