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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 1, Iss. 8 — Dec. 1, 2011
  • pp: 1439–1446

Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC

Yiyu Ou, Valdas Jokubavicius, Satoshi Kamiyama, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Rositza Yakimova, Mikael Syväjärvi, and Haiyan Ou  »View Author Affiliations

Optical Materials Express, Vol. 1, Issue 8, pp. 1439-1446 (2011)

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In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018cm−3 the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6x1018cm−3. Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.

© 2011 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5230) Optoelectronics : Photoluminescence
(300.6450) Spectroscopy : Spectroscopy, Raman

ToC Category:
Fluorescent and Luminescent Materials

Original Manuscript: September 29, 2011
Revised Manuscript: October 17, 2011
Manuscript Accepted: October 17, 2011
Published: November 2, 2011

Yiyu Ou, Valdas Jokubavicius, Satoshi Kamiyama, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Rositza Yakimova, Mikael Syväjärvi, and Haiyan Ou, "Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC," Opt. Mater. Express 1, 1439-1446 (2011)

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