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Donor-acceptor-pair emission characterization in N-B doped fluorescent SiCYiyu Ou, Valdas Jokubavicius, Satoshi Kamiyama, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Rositza Yakimova, Mikael Syväjärvi, and Haiyan Ou »View Author Affiliations
Yiyu Ou,1,*
Valdas Jokubavicius,2
Satoshi Kamiyama,3
Chuan Liu,4
Rolf W. Berg,4
Margareta Linnarsson,5
Rositza Yakimova,2
Mikael Syväjärvi,2
and Haiyan Ou1
1Department of Photonics Engineering, Technical University of Denmark, DK-Lyngby 2800, Denmark 2Department of Physics, Chemistry and Biology, Linköping University, Linköping SE-58183, Sweden 3Faculty of Science and Technology, Meijo University, Nagoya 468–8502, Japan 4Department of Chemistry, Technical University of Denmark, Lyngby DK-2800, Denmark 5School of Information and Communication Technology, Royal Institute of Technology, Kista SE-16440, Sweden *Corresponding author: yiyo@fotonik.dtu.dk |
Optical Materials Express, Vol. 1, Issue 8, pp. 1439-1446 (2011)
http://dx.doi.org/10.1364/OME.1.001439
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Abstract
In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018cm−3 the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6x1018cm−3. Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.
© 2011 OSA
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5230) Optoelectronics : Photoluminescence
(300.6450) Spectroscopy : Spectroscopy, Raman
ToC Category:
Fluorescent and Luminescent Materials
History
Original Manuscript: September 29, 2011
Revised Manuscript: October 17, 2011
Manuscript Accepted: October 17, 2011
Published: November 2, 2011
Citation
Yiyu Ou, Valdas Jokubavicius, Satoshi Kamiyama, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Rositza Yakimova, Mikael Syväjärvi, and Haiyan Ou, "Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC," Opt. Mater. Express 1, 1439-1446 (2011)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-1-8-1439
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References
- H. Yamamoto, “White LED phosphors: the next step,” Proc. SPIE7598, 759808 (2010). [CrossRef]
- P. Schlotter, R. Bompiedi, and J. Schneider, “Luminescence conversion of blue light emitting diodes,” Appl. Phys. A64, 417–418 (1997). [CrossRef]
- X. Guo, J. W. Graff, and E. F. Schubert, “Photon recycling semiconductor light-emitting diode,” in Proceedings of IEEE Conference on Electron Devices Meeting (IEEE, 1999), pp. 600–603.
- E. F. Schubert, Light-Emitting Diodes (Cambridge University Press, 2006). [CrossRef]
- C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010). [CrossRef]
- C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010). [CrossRef]
- R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005). [CrossRef]
- H. Kuo, C. Hung, H. Chen, K. Chen, C. Wang, C. Sher, C. Yeh, C. Lin, C. Chen, and Y. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express19, A930–A936 (2011). [CrossRef] [PubMed]
- H. Menkara, R. A. Gilstrap, T. Morris, M. Minkara, B. K. Wagner, and C. J. Summers, “Development of nanophosphors for light emitting diodes,” Opt. Express19, A972–A981 (2011). [CrossRef] [PubMed]
- H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011). [CrossRef]
- T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011). [CrossRef]
- C. Wetzel and T. Detchprohm, “Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency,” Opt. Express19, A962–A971 (2011). [CrossRef] [PubMed]
- H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19, A991–A1007 (2011). [CrossRef] [PubMed]
- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97, 111105 (2010). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98, 171111 (2011). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
- K. Hazu and S. F. Chichibu, “Optical polarization properties of m-plane AlxGa1–xN epitaxial films grown on m-plane freestanding GaN substrates toward nonpolar ultraviolet LEDs,” Opt. Express19, A1008–A1021 (2011). [CrossRef] [PubMed]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009). [CrossRef]
- G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008). [CrossRef]
- M. Mirzaei and M. Mirzaei, “A computational study of atomic oxygen-doped silicon carbide nanotubes,” J. Mol. Model.17, 527–531 (2011). [CrossRef]
- S. Choudhary and S. Qureshi, “Theoretical study on transport properties of a BN co-doped SiC nanotube,” Phys. Lett. A375, 3382–3385 (2011). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- Y. Ou, D. Corell, C. Dam-Hansen, P. Petersen, and H. Ou, “Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode,” Opt. Express19, A166–A172 (2011). [CrossRef] [PubMed]
- M. Syväjärvi and R. Yakimova, “Sublimation epitaxial growth of hexagonal and cubic SiC,” in Encyclopedia–the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011). [CrossRef] [PubMed]
- D. R. Hamilton, W. J. Choyke, and L. Patrick, “Photoluminescence of nitrogen-exciton complexes in 6H SiC,” Phys. Rev.131, 127–133 (1963). [CrossRef]
- M. Ikeda, H. Matsunami, and T. Tanaka, “Site effect on the impurity levels in 4H, 6H, and 15R SiC,” Phys. Rev. B22, 2842–2854 (1980). [CrossRef]
- W. J. Choyke, D. R. Hamilton, and L. Patrick, “Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption,” Phys. Rev.133, 1163–1166 (1964). [CrossRef]
- M. Ohishi, “Time-resolved studies on recombination luminescence of donor-acceptor pairs in ZnSe,” Jpn. J. Appl. Phys.25, 1546–1551 (1986). [CrossRef]
- P. Bäume, F. Kubacki, and J. Gutowski, “Characterization of impurities in II–VI semiconductors by time-resolved lineshape analysis of donor-acceptor pair spectra,” J. Cryst. Growth138, 266–273 (1994). [CrossRef]
- V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
- J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004). [CrossRef]
- X. Li, Z. Chen, and E. Shi, “Effect of doping on the Raman scattering of 6H-SiC crystals,” Physica B405, 2423–2426 (2010). [CrossRef]
- G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983). [CrossRef]
- H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987). [CrossRef]
- D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002). [CrossRef]
- S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys.40, 4771–4774 (2007). [CrossRef]
Akasaki, I.
Amano, H.
Bairamov, B. H.
Bäume, P.
Bergman, J. P.
Besson, P.
Bompiedi, R.
Chandrashekhar, M.
Chang, C.
Chang, S.
Chen, C.
Chen, H.
Chen, K.
Chen, L.
Chen, Z.
Cheng, Y.
Chi, Y.
Chichibu, S. F.
Choi, J.
Chou, P.
Choudhary, S.
Choyke, W. J.
Chua, C.
Clifton, P. H.
Corell, D.
Dam-Hansen, C.
Dawlaty, J.
Delamadeleine, E.
DenBaars, S. P.
Desalvo, G.
Detchprohm, T.
Dierolf, V.
Dong, X.
Ee, Y.
Einfeldt, S.
Feng, H.
Furukawa, K.
Furusho, T.
George, P. A.
Gilchrist, J. F.
Gilstrap, R. A.
Graff, J. W.
Grivickas, V.
Gulbinas, K.
Guo, X.
Gutowski, J.
Hadji, E.
Hamilton, D. R.
Hazu, K.
Henry, A.
Höppe, H. A.
Hou, Q.
Hung, C.
Hung, J.
Ikeda, M.
Irmer, G.
Ivanov, I. G.
Iwaya, M.
Jeon, P.
Johnson, N. M.
Jokubavicius, V.
Juestel, T.
Kamiyama, S.
Kim, G.
Kim, J.
Kim, T.
Kimoto, T.
Kinoshita, H.
Knauer, A.
Kneissl, M.
Kolbe, T.
Kolodzey, J.
Krames, M. R.
Kubacki, F.
Kumnorkaew, P.
Kuo, H.
Lee, G.
Li, G. H.
Li, K.
Li, X.
Lin, C.
Linnarsson, M.
Liu, G.
Lv, P. C.
Maeda, T.
Magnea, N.
Matsunami, H.
Menkara, H.
Minkara, M.
Mirzaei, M.
Mitsuishi, A.
Monecke, J.
Monemar, B.
Moriceau, H.
Morris, T.
Mueller, G.
Mueller-Mach, R.
Nakajima, S.
Nakamura, S.
Nakamura, Y.
Nakashima, S.
Ohishi, M.
Onuma, T.
Ou, H.
Ou, Y.
Pan, S. S.
Park, H.
Park, Y.
Patrick, L.
Petersen, P.
Poplawsky, J. D.
Powell, A.
Prosa, T. J.
Qureshi, S.
Rana, F.
Renard, P.
Schlotter, P.
Schmidt, P.
Schneider, J.
Schnick, W.
Schubert, E. F.
Shen, C.
Sher, C.
Shi, E.
Shigeta, M.
Shih, P.
Shivaraman, R.
Shivaraman, S.
Shu, C.
Song, R.
Song, Y.
Sotta, D.
Speck, J. S.
Spencer, M. G.
Stadler, F.
Strait, J. H.
Suda, J.
Summers, C. J.
Suzuki, A.
Syväjärvi, M.
Tanaka, T.
Tansu, N.
Teng, X. M.
Toporov, V. V.
Tyagi, A.
Uemoto, A.
Vogt, P.
Wagner, B. K.
Wang, C.
Wetzel, C.
Weyers, M.
Wu, C.
Xuan, G.
Yakimova, R.
Yamamoto, H.
Yang, C.
Yang, Z.
Ye, C.
Yeh, C.
Yoshimoto, M.
Yugami, H.
Zhang, J.
Zhang, X.
Zhao, H.
Zhong, H.
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983). [CrossRef]
- P. Bäume, F. Kubacki, and J. Gutowski, “Characterization of impurities in II–VI semiconductors by time-resolved lineshape analysis of donor-acceptor pair spectra,” J. Cryst. Growth138, 266–273 (1994). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002). [CrossRef]
- P. Schlotter, R. Bompiedi, and J. Schneider, “Luminescence conversion of blue light emitting diodes,” Appl. Phys. A64, 417–418 (1997). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009). [CrossRef]
- C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010). [CrossRef]
- C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010). [CrossRef]
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
- H. Kuo, C. Hung, H. Chen, K. Chen, C. Wang, C. Sher, C. Yeh, C. Lin, C. Chen, and Y. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express19, A930–A936 (2011). [CrossRef] [PubMed]
- C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010). [CrossRef]
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
- X. Li, Z. Chen, and E. Shi, “Effect of doping on the Raman scattering of 6H-SiC crystals,” Physica B405, 2423–2426 (2010). [CrossRef]
- H. Kuo, C. Hung, H. Chen, K. Chen, C. Wang, C. Sher, C. Yeh, C. Lin, C. Chen, and Y. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express19, A930–A936 (2011). [CrossRef] [PubMed]
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
- C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010). [CrossRef]
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
- K. Hazu and S. F. Chichibu, “Optical polarization properties of m-plane AlxGa1–xN epitaxial films grown on m-plane freestanding GaN substrates toward nonpolar ultraviolet LEDs,” Opt. Express19, A1008–A1021 (2011). [CrossRef] [PubMed]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004). [CrossRef]
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
- S. Choudhary and S. Qureshi, “Theoretical study on transport properties of a BN co-doped SiC nanotube,” Phys. Lett. A375, 3382–3385 (2011). [CrossRef]
- W. J. Choyke, D. R. Hamilton, and L. Patrick, “Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption,” Phys. Rev.133, 1163–1166 (1964). [CrossRef]
- D. R. Hamilton, W. J. Choyke, and L. Patrick, “Photoluminescence of nitrogen-exciton complexes in 6H SiC,” Phys. Rev.131, 127–133 (1963). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
- T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009). [CrossRef]
- D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002). [CrossRef]
- T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011). [CrossRef]
- G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008). [CrossRef]
- C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010). [CrossRef]
- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
- C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010). [CrossRef]
- H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009). [CrossRef]
- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011). [CrossRef]
- X. Guo, J. W. Graff, and E. F. Schubert, “Photon recycling semiconductor light-emitting diode,” in Proceedings of IEEE Conference on Electron Devices Meeting (IEEE, 1999), pp. 600–603.
- V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.
- V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.
- X. Guo, J. W. Graff, and E. F. Schubert, “Photon recycling semiconductor light-emitting diode,” in Proceedings of IEEE Conference on Electron Devices Meeting (IEEE, 1999), pp. 600–603.
- P. Bäume, F. Kubacki, and J. Gutowski, “Characterization of impurities in II–VI semiconductors by time-resolved lineshape analysis of donor-acceptor pair spectra,” J. Cryst. Growth138, 266–273 (1994). [CrossRef]
- D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002). [CrossRef]
- W. J. Choyke, D. R. Hamilton, and L. Patrick, “Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption,” Phys. Rev.133, 1163–1166 (1964). [CrossRef]
- D. R. Hamilton, W. J. Choyke, and L. Patrick, “Photoluminescence of nitrogen-exciton complexes in 6H SiC,” Phys. Rev.131, 127–133 (1963). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005). [CrossRef]
- C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010). [CrossRef]
- C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010). [CrossRef]
- M. Ikeda, H. Matsunami, and T. Tanaka, “Site effect on the impurity levels in 4H, 6H, and 15R SiC,” Phys. Rev. B22, 2842–2854 (1980). [CrossRef]
- G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
- V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.
- R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.
- J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004). [CrossRef]
- J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004). [CrossRef]
- J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
- G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008). [CrossRef]
- R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005). [CrossRef]
- P. Bäume, F. Kubacki, and J. Gutowski, “Characterization of impurities in II–VI semiconductors by time-resolved lineshape analysis of donor-acceptor pair spectra,” J. Cryst. Growth138, 266–273 (1994). [CrossRef]
- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011). [CrossRef]
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
- S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys.40, 4771–4774 (2007). [CrossRef]
- C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010). [CrossRef]
- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011). [CrossRef]
- X. Li, Z. Chen, and E. Shi, “Effect of doping on the Raman scattering of 6H-SiC crystals,” Physica B405, 2423–2426 (2010). [CrossRef]
- V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.
- H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011). [CrossRef]
- H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19, A991–A1007 (2011). [CrossRef] [PubMed]
- G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002). [CrossRef]
- M. Ikeda, H. Matsunami, and T. Tanaka, “Site effect on the impurity levels in 4H, 6H, and 15R SiC,” Phys. Rev. B22, 2842–2854 (1980). [CrossRef]
- M. Mirzaei and M. Mirzaei, “A computational study of atomic oxygen-doped silicon carbide nanotubes,” J. Mol. Model.17, 527–531 (2011). [CrossRef]
- M. Mirzaei and M. Mirzaei, “A computational study of atomic oxygen-doped silicon carbide nanotubes,” J. Mol. Model.17, 527–531 (2011). [CrossRef]
- H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987). [CrossRef]
- G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002). [CrossRef]
- R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005). [CrossRef]
- R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005). [CrossRef]
- H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987). [CrossRef]
- T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987). [CrossRef]
- M. Ohishi, “Time-resolved studies on recombination luminescence of donor-acceptor pairs in ZnSe,” Jpn. J. Appl. Phys.25, 1546–1551 (1986). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- Y. Ou, D. Corell, C. Dam-Hansen, P. Petersen, and H. Ou, “Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode,” Opt. Express19, A166–A172 (2011). [CrossRef] [PubMed]
- V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.
- Y. Ou, D. Corell, C. Dam-Hansen, P. Petersen, and H. Ou, “Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode,” Opt. Express19, A166–A172 (2011). [CrossRef] [PubMed]
- V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.
- S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys.40, 4771–4774 (2007). [CrossRef]
- J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004). [CrossRef]
- J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004). [CrossRef]
- W. J. Choyke, D. R. Hamilton, and L. Patrick, “Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption,” Phys. Rev.133, 1163–1166 (1964). [CrossRef]
- D. R. Hamilton, W. J. Choyke, and L. Patrick, “Photoluminescence of nitrogen-exciton complexes in 6H SiC,” Phys. Rev.131, 127–133 (1963). [CrossRef]
- G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008). [CrossRef]
- T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011). [CrossRef]
- S. Choudhary and S. Qureshi, “Theoretical study on transport properties of a BN co-doped SiC nanotube,” Phys. Lett. A375, 3382–3385 (2011). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009). [CrossRef]
- D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002). [CrossRef]
- P. Schlotter, R. Bompiedi, and J. Schneider, “Luminescence conversion of blue light emitting diodes,” Appl. Phys. A64, 417–418 (1997). [CrossRef]
- R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005). [CrossRef]
- P. Schlotter, R. Bompiedi, and J. Schneider, “Luminescence conversion of blue light emitting diodes,” Appl. Phys. A64, 417–418 (1997). [CrossRef]
- R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005). [CrossRef]
- X. Guo, J. W. Graff, and E. F. Schubert, “Photon recycling semiconductor light-emitting diode,” in Proceedings of IEEE Conference on Electron Devices Meeting (IEEE, 1999), pp. 600–603.
- E. F. Schubert, Light-Emitting Diodes (Cambridge University Press, 2006). [CrossRef]
- C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010). [CrossRef]
- X. Li, Z. Chen, and E. Shi, “Effect of doping on the Raman scattering of 6H-SiC crystals,” Physica B405, 2423–2426 (2010). [CrossRef]
- H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987). [CrossRef]
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
- T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009). [CrossRef]
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011). [CrossRef]
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
- D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002). [CrossRef]
- T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009). [CrossRef]
- R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987). [CrossRef]
- V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.
- M. Syväjärvi and R. Yakimova, “Sublimation epitaxial growth of hexagonal and cubic SiC,” in Encyclopedia–the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011). [CrossRef] [PubMed]
- M. Ikeda, H. Matsunami, and T. Tanaka, “Site effect on the impurity levels in 4H, 6H, and 15R SiC,” Phys. Rev. B22, 2842–2854 (1980). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98, 171111 (2011). [CrossRef]
- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011). [CrossRef]
- H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011). [CrossRef]
- H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19, A991–A1007 (2011). [CrossRef] [PubMed]
- J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97, 111105 (2010). [CrossRef]
- S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys.40, 4771–4774 (2007). [CrossRef]
- G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983). [CrossRef]
- T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011). [CrossRef]
- H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
- C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010). [CrossRef]
- G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008). [CrossRef]
- M. Syväjärvi and R. Yakimova, “Sublimation epitaxial growth of hexagonal and cubic SiC,” in Encyclopedia–the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011). [CrossRef] [PubMed]
- H. Yamamoto, “White LED phosphors: the next step,” Proc. SPIE7598, 759808 (2010). [CrossRef]
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
- S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys.40, 4771–4774 (2007). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98, 171111 (2011). [CrossRef]
- H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19, A991–A1007 (2011). [CrossRef] [PubMed]
- H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97, 111105 (2010). [CrossRef]
- G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98, 171111 (2011). [CrossRef]
- H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011). [CrossRef]
- H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19, A991–A1007 (2011). [CrossRef] [PubMed]
- J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97, 111105 (2010). [CrossRef]
- T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011). [CrossRef]
Adv. Funct. Mater.
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
Appl. Phys. A
- P. Schlotter, R. Bompiedi, and J. Schneider, “Luminescence conversion of blue light emitting diodes,” Appl. Phys. A64, 417–418 (1997). [CrossRef]
Appl. Phys. Lett.
- H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011). [CrossRef]
- T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97, 111105 (2010). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98, 171111 (2011). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
- J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009). [CrossRef]
IEEE Photon. J.
- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011). [CrossRef]
IEEE Photon. Technol. Lett.
- C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010). [CrossRef]
J. Appl. Phys.
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987). [CrossRef]
- D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002). [CrossRef]
J. Cryst. Growth
- P. Bäume, F. Kubacki, and J. Gutowski, “Characterization of impurities in II–VI semiconductors by time-resolved lineshape analysis of donor-acceptor pair spectra,” J. Cryst. Growth138, 266–273 (1994). [CrossRef]
J. Electron. Mater.
- G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008). [CrossRef]
J. Mol. Model.
- M. Mirzaei and M. Mirzaei, “A computational study of atomic oxygen-doped silicon carbide nanotubes,” J. Mol. Model.17, 527–531 (2011). [CrossRef]
J. Phys. D: Appl. Phys.
- S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys.40, 4771–4774 (2007). [CrossRef]
Jpn. J. Appl. Phys.
- M. Ohishi, “Time-resolved studies on recombination luminescence of donor-acceptor pairs in ZnSe,” Jpn. J. Appl. Phys.25, 1546–1551 (1986). [CrossRef]
Opt. Express
- Y. Ou, D. Corell, C. Dam-Hansen, P. Petersen, and H. Ou, “Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode,” Opt. Express19, A166–A172 (2011). [CrossRef] [PubMed]
- C. Wetzel and T. Detchprohm, “Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency,” Opt. Express19, A962–A971 (2011). [CrossRef] [PubMed]
- H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19, A991–A1007 (2011). [CrossRef] [PubMed]
- H. Kuo, C. Hung, H. Chen, K. Chen, C. Wang, C. Sher, C. Yeh, C. Lin, C. Chen, and Y. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express19, A930–A936 (2011). [CrossRef] [PubMed]
- H. Menkara, R. A. Gilstrap, T. Morris, M. Minkara, B. K. Wagner, and C. J. Summers, “Development of nanophosphors for light emitting diodes,” Opt. Express19, A972–A981 (2011). [CrossRef] [PubMed]
- K. Hazu and S. F. Chichibu, “Optical polarization properties of m-plane AlxGa1–xN epitaxial films grown on m-plane freestanding GaN substrates toward nonpolar ultraviolet LEDs,” Opt. Express19, A1008–A1021 (2011). [CrossRef] [PubMed]
Org. Electron.
- C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010). [CrossRef]
Phys. Lett. A
- S. Choudhary and S. Qureshi, “Theoretical study on transport properties of a BN co-doped SiC nanotube,” Phys. Lett. A375, 3382–3385 (2011). [CrossRef]
Phys. Rev.
- D. R. Hamilton, W. J. Choyke, and L. Patrick, “Photoluminescence of nitrogen-exciton complexes in 6H SiC,” Phys. Rev.131, 127–133 (1963). [CrossRef]
- W. J. Choyke, D. R. Hamilton, and L. Patrick, “Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption,” Phys. Rev.133, 1163–1166 (1964). [CrossRef]
Phys. Rev. B
- M. Ikeda, H. Matsunami, and T. Tanaka, “Site effect on the impurity levels in 4H, 6H, and 15R SiC,” Phys. Rev. B22, 2842–2854 (1980). [CrossRef]
Phys. Status Solidi A
- R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005). [CrossRef]
Phys. Status Solidi B
- G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983). [CrossRef]
Physica B
- X. Li, Z. Chen, and E. Shi, “Effect of doping on the Raman scattering of 6H-SiC crystals,” Physica B405, 2423–2426 (2010). [CrossRef]
Proc. SPIE
- H. Yamamoto, “White LED phosphors: the next step,” Proc. SPIE7598, 759808 (2010). [CrossRef]
Other
- X. Guo, J. W. Graff, and E. F. Schubert, “Photon recycling semiconductor light-emitting diode,” in Proceedings of IEEE Conference on Electron Devices Meeting (IEEE, 1999), pp. 600–603.
- E. F. Schubert, Light-Emitting Diodes (Cambridge University Press, 2006). [CrossRef]
- V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.
- M. Syväjärvi and R. Yakimova, “Sublimation epitaxial growth of hexagonal and cubic SiC,” in Encyclopedia–the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011). [CrossRef] [PubMed]
2011, Kuo, Opt. Express
- H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011). [CrossRef]
- T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011). [CrossRef]
- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98, 171111 (2011). [CrossRef]
- M. Mirzaei and M. Mirzaei, “A computational study of atomic oxygen-doped silicon carbide nanotubes,” J. Mol. Model.17, 527–531 (2011). [CrossRef]
- S. Choudhary and S. Qureshi, “Theoretical study on transport properties of a BN co-doped SiC nanotube,” Phys. Lett. A375, 3382–3385 (2011). [CrossRef]
- X. Li, Z. Chen, and E. Shi, “Effect of doping on the Raman scattering of 6H-SiC crystals,” Physica B405, 2423–2426 (2010). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
- H. Yamamoto, “White LED phosphors: the next step,” Proc. SPIE7598, 759808 (2010). [CrossRef]
- C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010). [CrossRef]
- C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010). [CrossRef]
- J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97, 111105 (2010). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009). [CrossRef]
- G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008). [CrossRef]
- Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008). [CrossRef]
- S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys.40, 4771–4774 (2007). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005). [CrossRef]
- J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004). [CrossRef]
- D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002). [CrossRef]
- P. Schlotter, R. Bompiedi, and J. Schneider, “Luminescence conversion of blue light emitting diodes,” Appl. Phys. A64, 417–418 (1997). [CrossRef]
- P. Bäume, F. Kubacki, and J. Gutowski, “Characterization of impurities in II–VI semiconductors by time-resolved lineshape analysis of donor-acceptor pair spectra,” J. Cryst. Growth138, 266–273 (1994). [CrossRef]
- H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987). [CrossRef]
- M. Ohishi, “Time-resolved studies on recombination luminescence of donor-acceptor pairs in ZnSe,” Jpn. J. Appl. Phys.25, 1546–1551 (1986). [CrossRef]
- G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983). [CrossRef]
- M. Ikeda, H. Matsunami, and T. Tanaka, “Site effect on the impurity levels in 4H, 6H, and 15R SiC,” Phys. Rev. B22, 2842–2854 (1980). [CrossRef]
- W. J. Choyke, D. R. Hamilton, and L. Patrick, “Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption,” Phys. Rev.133, 1163–1166 (1964). [CrossRef]
- D. R. Hamilton, W. J. Choyke, and L. Patrick, “Photoluminescence of nitrogen-exciton complexes in 6H SiC,” Phys. Rev.131, 127–133 (1963). [CrossRef]
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