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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 2, Iss. 10 — Oct. 1, 2012
  • pp: 1336–1342

Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications

S. A. Claussen, K. C. Balram, E. T. Fei, T. I. Kamins, J. S. Harris, and D. A. B. Miller  »View Author Affiliations


Optical Materials Express, Vol. 2, Issue 10, pp. 1336-1342 (2012)
http://dx.doi.org/10.1364/OME.2.001336


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Abstract

We propose a robust fabrication process for growing Ge and Ge-based heterostructures in growth windows with Si sidewalls which can be applied to growth in thick Si optical waveguides. Sidewall growth is eliminated by the presence of a dielectric spacer layer which covers the sidewalls. We demonstrate the effectiveness of this process by selective-area growth of Ge and Ge/SiGe quantum wells, and show an improved performance and increased process reliability over previous work.

© 2012 OSA

OCIS Codes
(130.3130) Integrated optics : Integrated optics materials
(200.4650) Optics in computing : Optical interconnects
(220.0220) Optical design and fabrication : Optical design and fabrication
(230.7370) Optical devices : Waveguides
(250.4110) Optoelectronics : Modulators

ToC Category:
Materials for Integrated Optics

History
Original Manuscript: August 7, 2012
Revised Manuscript: August 24, 2012
Manuscript Accepted: August 24, 2012
Published: August 31, 2012

Citation
S. A. Claussen, K. C. Balram, E. T. Fei, T. I. Kamins, J. S. Harris, and D. A. B. Miller, "Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications," Opt. Mater. Express 2, 1336-1342 (2012)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-2-10-1336


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References

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