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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 2, Iss. 10 — Oct. 1, 2012
  • pp: 1397–1406

Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes

Peng Zhao, Lu Han, Matthew R. McGoogan, and Hongping Zhao  »View Author Affiliations


Optical Materials Express, Vol. 2, Issue 10, pp. 1397-1406 (2012)
http://dx.doi.org/10.1364/OME.2.001397


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Abstract

Analysis of transverse magnetic (TM) mode light extraction efficiency enhancement for AlGaN quantum wells (QWs) based deep ultraviolet (UV) light-emitting diodes (LEDs) with III-nitride micro-hemisphere and micro-dome structures on the p-type layer are studied and compared to that of the conventional deep-UV LEDs with flat surface. The transverse electric (TE) and TM components of the spontaneous emission of AlGaN QWs with AlN barriers were calculated by using a self-consistent 6-band k∙p method, which shows the TM component overtakes the TE component and becomes the dominant contribution of the spontaneous emission when the Al-content of the AlGaN QWs is larger than 0.66. The TM mode light extraction efficiency of the deep-UV LEDs emitting at 250 nm with AlGaN micro-domes as compared to the conventional LEDs with flat surface is calculated based on three dimensional finite difference time domain (3D-FDTD) method. The effects of the III-nitride micro-dome diameter and height as well as the p-type layer thickness on the light extraction efficiency were comprehensively studied. The results indicate optimized light extraction efficiency enhancement (>7.3 times) of the dominant TM polarized spontaneous emission for deep-UV LEDs with III-nitride micro-domes.

© 2012 OSA

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Nanomaterials

History
Original Manuscript: August 30, 2012
Revised Manuscript: September 15, 2012
Manuscript Accepted: September 15, 2012
Published: September 18, 2012

Citation
Peng Zhao, Lu Han, Matthew R. McGoogan, and Hongping Zhao, "Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes," Opt. Mater. Express 2, 1397-1406 (2012)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-2-10-1397


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References

  1. H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, “231–261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire,” Appl. Phys. Lett.91(7), 071901 (2007). [CrossRef]
  2. M. Asif Khan, “AlGaN multiple quantum well based deep UV LEDs and their applications,” Phys. Status Solidi A203(7), 1764–1770 (2006). [CrossRef]
  3. A. A. Allerman, M. H. Crawford, A. J. Fischer, K. H. A. Bogart, S. R. Lee, D. M. Follstaedt, P. P. Provencio, and D. D. Koleske, “Growth and design of deep-UV (240-290 nm) light emitting diodes using AlGaN alloys,” J. Cryst. Growth272(1-4), 227–241 (2004). [CrossRef]
  4. H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222–282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire,” Phys. Status Solidi A206(6), 1176–1182 (2009). [CrossRef]
  5. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, “High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures,” Jpn. J. Appl. Phys.34(Part 2, No. 7A), L797–L799 (1995). [CrossRef]
  6. Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett.94(11), 111109 (2009). [CrossRef]
  7. J.-H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu, R. D. Dupuis, Z. H. Wu, A. M. Fischer, and F. A. Ponce, “Control of quantum-confined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes,” Appl. Phys. Lett.92(10), 101113 (2008). [CrossRef]
  8. T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu, “Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates,” Appl. Phys. Lett.89(9), 091906 (2006). [CrossRef]
  9. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011). [CrossRef] [PubMed]
  10. H. Zhao, R. A. Arif, and N. Tansu, “Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm,” IEEE J. Sel. Top. Quantum Electron.15(4), 1104–1114 (2009). [CrossRef]
  11. C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,” J. Appl. Phys.93(11), 9383–9385 (2003). [CrossRef]
  12. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
  13. J. J. Wierer, A. David, and M. M. Megens, “III-nitride photoniccrystal light-emitting diodes with high extraction efficiency,” Nat. Photonics3(3), 163–169 (2009). [CrossRef]
  14. Y.-K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett.91(22), 221107 (2007). [CrossRef]
  15. Y.-K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-Nitride light emitting diodes with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron.15(4), 1218–1225 (2009). [CrossRef]
  16. P. Kumnorkaew, Y. K. Ee, N. Tansu, and J. F. Gilchrist, “Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays,” Langmuir24(21), 12150–12157 (2008). [CrossRef] [PubMed]
  17. X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3(3), 489–499 (2011). [CrossRef]
  18. Q. Xi, M. F. Schubert, J. K. Kim, E. F. Schubert, M. Chen, S. Y. Lin, W. Liu, and J. A. Smart, “Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection,” Nat. Photonics1, 176–179 (2007).
  19. P. Zhao and H. Zhao, “Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes,” Opt. Express20(S5), A765–A776 (2012). [CrossRef]
  20. W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi, “Nanostructuring GaN using microsphere lithography,” J. Vac. Sci. Technol. B26(1), 76–79 (2008). [CrossRef]
  21. W. Y. Fu, K.-K. Wong, and H. W. Choi, “Close-packed hemiellipsoid arrays: a photonic band gap structure patterned by nanosphere lithography,” Appl. Phys. Lett.95(13), 133125 (2009). [CrossRef]
  22. Lumerical FDTD Solution.
  23. M. Bass, ed., Handbook of Optics, Vol. 2: Devices, Measurements, and Properties (Optical Society of America, 1994).
  24. J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010). [CrossRef]
  25. J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-Delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(17), 171111 (2011). [CrossRef]
  26. Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 251112 (2011). [CrossRef]
  27. H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Self-consistent analysis of strain-compensated InGaN-AlGaN quantum wells for lasers and light emitting diodes,” IEEE J. Quantum Electron.45(1), 66–78 (2009). [CrossRef]
  28. H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420-500 nm,” Opt. Quantum Electron.40(5-6), 301–306 (2008). [CrossRef]
  29. S. L. Chuang, “Optical gain of strained wurtzite GaN quantum-well lasers,” IEEE J. Quantum Electron.32(10), 1791–1800 (1996). [CrossRef]
  30. I. Vurgaftman and J. R. Meyer, in Nitride Semiconductor Devices, J. Piprek, ed. (Wiley, 2007), Chap. 2.
  31. I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys.94(6), 3675–3696 (2003). [CrossRef]
  32. A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics2(2), 77–84 (2008). [CrossRef]
  33. M. Asif Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis, “III–nitride UV devices,” Jpn. J. Appl. Phys.44(10), 7191–7206 (2005). [CrossRef]

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