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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 2, Iss. 11 — Nov. 1, 2012
  • pp: 1462–1469

High active carrier concentration in n-type, thin film Ge using delta-doping

Rodolfo E. Camacho-Aguilera, Yan Cai, Jonathan T. Bessette, Lionel C. Kimerling, and Jurgen Michel  »View Author Affiliations


Optical Materials Express, Vol. 2, Issue 11, pp. 1462-1469 (2012)
http://dx.doi.org/10.1364/OME.2.001462


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Abstract

We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 × 1020cm−3, and uniform activated dopant concentrations above 4 × 1019cm−3 in a 600-800nm thick Ge layer after in-diffusion. By controlling dopant out-diffusion, near-complete incorporation of phosphorus diffusion source is shown.

© 2012 OSA

OCIS Codes
(140.3380) Lasers and laser optics : Laser materials
(160.3130) Materials : Integrated optics materials
(310.1860) Thin films : Deposition and fabrication
(310.3840) Thin films : Materials and process characterization

ToC Category:
Semiconductors

History
Original Manuscript: September 10, 2012
Revised Manuscript: September 25, 2012
Manuscript Accepted: September 25, 2012
Published: September 28, 2012

Citation
Rodolfo E. Camacho-Aguilera, Yan Cai, Jonathan T. Bessette, Lionel C. Kimerling, and Jurgen Michel, "High active carrier concentration in n-type, thin film Ge using delta-doping," Opt. Mater. Express 2, 1462-1469 (2012)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-2-11-1462


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References

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