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Nanopatterning of atomic layer deposited Al:ZnO films using electron beam lithography for waveguide applications in the NIR region |
Optical Materials Express, Vol. 2, Issue 12, pp. 1743-1750 (2012)
http://dx.doi.org/10.1364/OME.2.001743
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Abstract
We have demonstrated the nanopatterning of atomic layer deposited (ALD) Al:ZnO (AZO) films using electron beam lithography (EBL) for plasmonic waveguide applications. The influence of grains on repeatable planar nanostructures by nanolithography process was studied for annealed films in order to avoid effects of granularity. Our results demonstrate that the nanopatterning of AZO by the EBL technique is limited due to granularity of ALD grown AZO films. This finding suggests the limitations of ALD grown samples for optical applications where nanopatterns are fabricated by the EBL technique. Furthermore, the ALD grown films lose conductivity orders of magnitude on annealing.
© 2012 OSA
OCIS Codes
(160.6000) Materials : Semiconductor materials
(160.3918) Materials : Metamaterials
(160.4236) Materials : Nanomaterials
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6845) Thin films : Thin film devices and applications
ToC Category:
Thin Films
History
Original Manuscript: June 19, 2012
Revised Manuscript: September 13, 2012
Manuscript Accepted: October 2, 2012
Published: November 7, 2012
Citation
Kevin Santiago, Rajeh Mundle, Chandan B. Samantaray, M. Bahoura, and A. K. Pradhan, "Nanopatterning of atomic layer deposited Al:ZnO films using electron beam lithography for waveguide applications in the NIR region," Opt. Mater. Express 2, 1743-1750 (2012)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-2-12-1743
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