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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 2, Iss. 4 — Apr. 1, 2012
  • pp: 461–468

Ge2Sb1.5Bi0.5Te5 thin film as inorganic photoresist

Hongzhu Xi, Qian Liu, Ye Tian, Yongsheng Wang, Shengming Guo, and Maoyou Chu  »View Author Affiliations

Optical Materials Express, Vol. 2, Issue 4, pp. 461-468 (2012)

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A new phase change material Ge2Sb1.5Bi0.5Te5 (GSBT) with good optothermal effect has been developed as an inorganic photoresist. Masks based on the material can be easily fabricated by home-built laser direct writing (LDW) equipment, and as a result mask patterns have been successfully transferred onto Si substrates by reactive ion etching techniques. Experimental results indicate that maximum etching selectivity of Si to GSBT reaches up to 524:1, which is comparable with the traditional organic photoresists, and the high ratio is also explained theoretically. Because of the merits of the inorganic photoresist, it might prove useful in silicon-based microelectronics

© 2012 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(220.3740) Optical design and fabrication : Lithography
(310.1860) Thin films : Deposition and fabrication
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:

Original Manuscript: January 12, 2012
Revised Manuscript: March 2, 2012
Manuscript Accepted: March 9, 2012
Published: March 21, 2012

Hongzhu Xi, Qian Liu, Ye Tian, Yongsheng Wang, Shengming Guo, and Maoyou Chu, "Ge2Sb1.5Bi0.5Te5 thin film as inorganic photoresist," Opt. Mater. Express 2, 461-468 (2012)

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