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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 2, Iss. 6 — Jun. 1, 2012
  • pp: 799–813

Single-step fabrication of luminescent GaAs nanocrystals by pulsed laser ablation in liquids

Turkka Salminen, Johnny Dahl, Marjukka Tuominen, Pekka Laukkanen, Eero Arola, and Tapio Niemi  »View Author Affiliations

Optical Materials Express, Vol. 2, Issue 6, pp. 799-813 (2012)

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Optical absorption and emission properties of gallium arsenide nanocrystals can be tuned across the visible spectrum by tuning their size. The surface of pure GaAs nanocrystals tends to oxidize, which deteriorates their optical properties. In order to prevent the oxidization, surface passivation has been previously demonstrated for GaAs nanocrystals larger than the Bohr exciton radius. In this paper, we study synthesis of small GaAs nanocrystals by pulsed laser ablation in liquids combined with simultaneous chemical surface passivation. The fabricated nanocrystals are smaller than the Bohr exciton radius and exhibit photoluminescence peaked near 530 nm due to quantum confinement. The photoluminescence properties are stable for at least six months, which is attributed to successful surface passivation. The chemical structure of the nanocrystals and changes caused by thermal annealing are elucidated with Raman spectroscopy, transmission electron microscopy and x-ray photoelectron spectroscopy.

© 2012 OSA

OCIS Codes
(160.4670) Materials : Optical materials
(250.5230) Optoelectronics : Photoluminescence
(350.3850) Other areas of optics : Materials processing
(160.4236) Materials : Nanomaterials

ToC Category:
Fluorescent and Luminescent Materials

Original Manuscript: March 26, 2012
Revised Manuscript: April 20, 2012
Manuscript Accepted: May 10, 2012
Published: May 14, 2012

Turkka Salminen, Johnny Dahl, Marjukka Tuominen, Pekka Laukkanen, Eero Arola, and Tapio Niemi, "Single-step fabrication of luminescent GaAs nanocrystals by pulsed laser ablation in liquids," Opt. Mater. Express 2, 799-813 (2012)

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