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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 2, Iss. 6 — Jun. 1, 2012
  • pp: 872–877

Optics InfoBase > Optical Materials Express > Volume 2 > Issue 6 > Page 872

Improved electroluminescence from silicon nitride light emitting devices by localized surface plasmons

Dongsheng Li, Feng Wang, Changrui Ren, and Deren Yang  »View Author Affiliations


Optical Materials Express, Vol. 2, Issue 6, pp. 872-877 (2012)
http://dx.doi.org/10.1364/OME.2.000872


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Abstract

Enhanced electroluminescence (EL) from SiNx light emitting devices (LEDs) with an ITO/SiO2/SiNx/Ag/p/p+-Si/Al structure was observed. Comparing to SiNx LEDs without Ag islands layer, those with Ag islands layer could conduct a higher injection current and extract light more efficiently due to the roughness of Ag islands film. Moreover, the localized surface plasmons induced by Ag islands enhanced the radiative efficiency of LEDs, resulting in the EL enhancement of ~14. By the combination enhancement on light extraction efficiency, radiative efficiency, and current-injection efficiency, the external quantum efficiency of EL from SiNx LEDs was improved by at least one order of magnitude.

© 2012 OSA

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(310.6860) Thin films : Thin films, optical properties
(250.5403) Optoelectronics : Plasmonics

ToC Category:
Plasmonics

History
Original Manuscript: May 10, 2012
Revised Manuscript: May 22, 2012
Manuscript Accepted: May 22, 2012
Published: May 24, 2012

Citation
Dongsheng Li, Feng Wang, Changrui Ren, and Deren Yang, "Improved electroluminescence from silicon nitride light emitting devices by localized surface plasmons," Opt. Mater. Express 2, 872-877 (2012)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-2-6-872


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