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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 2, Iss. 6 — Jun. 1, 2012
  • pp: 872–877

Improved electroluminescence from silicon nitride light emitting devices by localized surface plasmons

Dongsheng Li, Feng Wang, Changrui Ren, and Deren Yang  »View Author Affiliations

Optical Materials Express, Vol. 2, Issue 6, pp. 872-877 (2012)

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Enhanced electroluminescence (EL) from SiNx light emitting devices (LEDs) with an ITO/SiO2/SiNx/Ag/p/p+-Si/Al structure was observed. Comparing to SiNx LEDs without Ag islands layer, those with Ag islands layer could conduct a higher injection current and extract light more efficiently due to the roughness of Ag islands film. Moreover, the localized surface plasmons induced by Ag islands enhanced the radiative efficiency of LEDs, resulting in the EL enhancement of ~14. By the combination enhancement on light extraction efficiency, radiative efficiency, and current-injection efficiency, the external quantum efficiency of EL from SiNx LEDs was improved by at least one order of magnitude.

© 2012 OSA

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(310.6860) Thin films : Thin films, optical properties
(250.5403) Optoelectronics : Plasmonics

ToC Category:

Original Manuscript: May 10, 2012
Revised Manuscript: May 22, 2012
Manuscript Accepted: May 22, 2012
Published: May 24, 2012

Dongsheng Li, Feng Wang, Changrui Ren, and Deren Yang, "Improved electroluminescence from silicon nitride light emitting devices by localized surface plasmons," Opt. Mater. Express 2, 872-877 (2012)

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  1. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000). [CrossRef] [PubMed]
  2. M. Wang, D. Yang, D. Li, Z. Yuan, and D. Que, “Correlation between luminescence and structural evolution of Si-rich silicon oxide film annealed at different temperatures,” J. Appl. Phys.101(10), 103504 (2007). [CrossRef]
  3. M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008). [CrossRef]
  4. F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002). [CrossRef]
  5. D. Li, X. Zhang, L. Jin, and D. Yang, “Structure and luminescence evolution of annealed Europium-doped silicon oxides films,” Opt. Express18(26), 27191–27196 (2010). [CrossRef] [PubMed]
  6. Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003). [CrossRef]
  7. B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006). [CrossRef]
  8. T.-C. Tsai, L.-Z. Yu, and C.-T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology18(27), 275707 (2007). [CrossRef]
  9. B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes,” Appl. Phys. Lett.95(15), 153103 (2009). [CrossRef]
  10. B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008). [CrossRef]
  11. F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012). [CrossRef]
  12. Z. T. Kang, B. K. Wagner, J. Parrish, D. Schiff, and C. J. Summers, “Enhancement of white luminescence from SiNx films by surface roughening,” Nanotechnology18(41), 415709 (2007). [CrossRef]
  13. B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate,” Appl. Phys. Lett.95(7), 073113 (2009). [CrossRef]
  14. D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009). [CrossRef]
  15. W. L. Barnes, “Light-emitting devices: turning the tables on surface plasmons,” Nat. Mater.3(9), 588–589 (2004). [CrossRef] [PubMed]
  16. K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004). [CrossRef] [PubMed]
  17. R. Paiella, “Tunable surface plasmons in coupled metallo-dielectric multiple layers for light-emission efficiency enhancement,” Appl. Phys. Lett.87(11), 111104 (2005). [CrossRef]
  18. D.-M. Yeh, C.-F. Huang, C.-Y. Chen, Y.-C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett.91(17), 171103 (2007). [CrossRef]
  19. H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011). [CrossRef]
  20. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011). [CrossRef] [PubMed]
  21. R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012). [CrossRef]
  22. R. T. Tung, “Electron transport at metal-semiconductor interfaces: General theory,” Phys. Rev. B Condens. Matter45(23), 13509–13523 (1992). [CrossRef] [PubMed]
  23. N. Gaillard, L. Pinzelli, M. Gros-Jean, and A. Bsiesy, “In situ electric field simulation in metal/insulator/metal capacitors,” Appl. Phys. Lett.89(13), 133506 (2006). [CrossRef]
  24. A. C. Tamboli, K. C. McGroddy, and E. L. Hu, “Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes,” Phys. Status Solidi C6(S2), S807–S810 (2009). [CrossRef]

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