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> 3 MW peak power at 266 nm using Nd:YAG/ Cr4+:YAG microchip laser and fluxless-BBO |
Optical Materials Express, Vol. 2, Issue 7, pp. 907-913 (2012)
http://dx.doi.org/10.1364/OME.2.000907
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Abstract
Wavelength conversion efficiency to the UV region is limited by a host of factors. To overcome several of these constraints, we use a fluxless-grown BBO crystal for fourth harmonic conversion of a linearly polarized Nd:YAG microchip laser, passively Q-switched with [110] cut Cr4+:YAG. The high quality BBO crystal used in the picosecond pulse width regime enables 60% conversion efficiency to give 3.4 MW peak power, 250 ps, 100 Hz pulses at 266 nm.
© 2012 OSA
OCIS Codes
(140.3610) Lasers and laser optics : Lasers, ultraviolet
(190.2620) Nonlinear optics : Harmonic generation and mixing
(190.4360) Nonlinear optics : Nonlinear optics, devices
ToC Category:
Nonlinear Optics
History
Original Manuscript: April 16, 2012
Revised Manuscript: May 16, 2012
Manuscript Accepted: May 16, 2012
Published: June 12, 2012
Virtual Issues
Advances in Optical Materials (2012) Optical Materials Express
Citation
R. Bhandari, T. Taira, A. Miyamoto, Y. Furukawa, and T. Tago, "> 3 MW peak power at 266 nm using Nd:YAG/ Cr4+:YAG microchip laser and fluxless-BBO," Opt. Mater. Express 2, 907-913 (2012)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-2-7-907
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References
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