OSA's Digital Library

Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 2, Iss. 9 — Sep. 1, 2012
  • pp: 1203–1208

Development of periodically oriented gallium nitride for non-linear optics [Invited]

Jennifer Hite, Mark Twigg, Michael Mastro, Jaime Freitas, Jr., Jerry Meyer, Igor Vurgaftman, Shawn O’Connor, Nicholas Condon, Fritz Kub, Steven Bowman, and Charles Eddy, Jr.  »View Author Affiliations


Optical Materials Express, Vol. 2, Issue 9, pp. 1203-1208 (2012)
http://dx.doi.org/10.1364/OME.2.001203


View Full Text Article

Enhanced HTML    Acrobat PDF (882 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

Methods for growing periodically alternating polarities of GaN on GaN substrates have been developed. The resulting periodically oriented samples demonstrate feasibility of using this method to produce structures of utility in optical parametric generation.

© 2012 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(190.4400) Nonlinear optics : Nonlinear optics, materials

ToC Category:
Nonlinear Optical Materials

History
Original Manuscript: April 16, 2012
Revised Manuscript: June 7, 2012
Manuscript Accepted: June 26, 2012
Published: August 7, 2012

Virtual Issues
Advances in Optical Materials (2012) Optical Materials Express

Citation
Jennifer Hite, Mark Twigg, Michael Mastro, Jaime Freitas, Jerry Meyer, Igor Vurgaftman, Shawn O’Connor, Nicholas Condon, Fritz Kub, Steven Bowman, and Charles Eddy, "Development of periodically oriented gallium nitride for non-linear optics [Invited]," Opt. Mater. Express 2, 1203-1208 (2012)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-2-9-1203


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. D. S. Hum and M. M. Fejer, “Quasi-phase matching,” C. R. Phys.8(2), 180–198 (2007). [CrossRef]
  2. L. Arizmendi, “Photonic applications of lithium niobate crystals,” Phys. Status Solidi A201(2), 253–283 (2004). [CrossRef]
  3. C. Kieleck, A. Hildenbrand, M. Eichhorn, D. Faye, E. Lallier, B. Gérard, and S. D. Jackson, “OP-GaAs OPO pumped by 2μm Q-switched lasers: Tm;Ho:Silica fiber laser and Ho:YAG laser,” Proc. SPIE7836, 783607 (2010). [CrossRef]
  4. E. B. Petersen, W. Shi, A. Chavez-Pirson, N. Peyghambarian, and A. T. Cooney, “Efficient parametric terahertz generation in quasi-phase-matched GaP through cavity enhanced difference-frequency generation,” Appl. Phys. Lett.98(12), 121119 (2011). [CrossRef]
  5. M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001). [CrossRef]
  6. A. Jeżowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, and T. Paszkiewicz, “Thermal conductivity of GaN crystals in 4.2–300 K range,” Solid State Commun.128(2-3), 69–73 (2003). [CrossRef]
  7. J. Miragliotta, D. K. Wickenden, T. J. Kistenmacher, and W. A. Bryden, “Linear- and nonlinear-optical properties of GaN thin films,” J. Opt. Soc. Am. B10(8), 1447–1456 (1993). [CrossRef]
  8. M. Abe, H. Sato, I. Shoji, J. Suda, M. Yoshimura, Y. Kitaoka, Y. Mori, and T. Kondo, “Accurate measurement of quadratic nonlinear-optical coefficients of gallium nitride,” J. Opt. Soc. Am. B27(10), 2026–2034 (2010). [CrossRef]
  9. A. Chowdhury, H. M. Ng, M. Bhardwaj, and N. G. Weimann, “Second-harmonic generation in periodically poled GaN,” Appl. Phys. Lett.83(6), 1077–1079 (2003). [CrossRef]
  10. C. Xiong, W. Pernice, K. K. Ryu, C. Schuck, K. Y. Fong, T. Palacios, and H. X. Tang, “Integrated GaN photonic circuits on silicon (100) for second harmonic generation,” Opt. Express19(11), 10462–10470 (2011). [CrossRef] [PubMed]
  11. T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003). [CrossRef]
  12. M. Welna, R. Kudrawiec, M. Motyka, R. Kucharski, M. Zając, M. Rudziński, J. Misiewicz, R. Doradziński, and R. Dwiliński, “Transparency of GaN substrates in the mid-infrared spectral range,” Cryst. Res. Technol.47(3), 347–350 (2012). [CrossRef]
  13. V. Gavrilenko and R. Wu, “Second harmonic generation of GaN (0001),” Phys. Rev. B65(3), 035405 (2001). [CrossRef]
  14. J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003). [CrossRef]
  15. J. P. Long, B. S. Simpkins, D. J. Rowenhorst, and P. E. Pehrsson, “Far-field imaging of optical second-harmonic generation in single GaN nanowires,” Nano Lett.7(3), 831–836 (2007). [CrossRef] [PubMed]
  16. S. Mita, R. Collazo, and Z. Sitar, “Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition,” J. Cryst. Growth311(10), 3044–3048 (2009). [CrossRef]
  17. R. Katayama, Y. Kuge, K. Onabe, T. Matsushita, and T. Kondo, “Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate,” Appl. Phys. Lett.89(23), 231910 (2006). [CrossRef]
  18. F. A. Ponce, GaN and Related Materials, S. J. Pearton, ed. (Amsterdam, The Netherlands: Gordon and Breach Science Publishers, 1997), pp. 141–170.
  19. K. Hiramatsu, T. Detchprohm, and I. Akasaki, “Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy,” Jpn. J. Appl. Phys.32(Part 1, No. 4), 1528–1533 (1993). [CrossRef]
  20. J. Yang, G. J. Brown, M. Dutta, and M. A. Stroscio, “Photon absorption in the Restrahlen band of thin films of GaN and AlN: two phonon effects,” J. Appl. Phys.98(4), 043517 (2005). [CrossRef]
  21. J. K. Hite, M. E. Twigg, M. A. Mastro, C. R. Eddy, and F. J. Kub, “Initiating polarity inversion in GaN growth using an AlN interlayer,” Phys. Status Solidi A208(7), 1504–1506 (2011). [CrossRef]
  22. J. K. Hite, N. D. Bassim, M. E. Twigg, M. A. Mastro, F. J. Kub, and C. R. Eddy., “GaN vertical and lateral polarity heterostructures on GaN substrates,” J. Cryst. Growth332(1), 43–47 (2011). [CrossRef]
  23. S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, “Modeling of threading dislocation reduction in growing GaN layers,” Phys. Status Solidi A179(1), 125–145 (2000). [CrossRef]
  24. F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, and J. Likonen, “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN,” Appl. Phys. Lett.86(3), 031915 (2005). [CrossRef]
  25. R. Geiss, A. Chowdhury, C. M. Staus, H. M. Ng, S. S. Park, and J. Y. Han, “Low loss GaN at 1550 nm,” Appl. Phys. Lett.87(13), 132107 (2005). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1 Fig. 2 Fig. 3
 
Fig. 4
 

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited