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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 2, Iss. 9 — Sep. 1, 2012
  • pp: 1270–1277

Optics InfoBase > Optical Materials Express > Volume 2 > Issue 9 > Page 1270

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Kunlun Yan, Rongping Wang, Khu Vu, Steve Madden, Kidane Belay, Robert Elliman, and Barry Luther-Davies  »View Author Affiliations


Optical Materials Express, Vol. 2, Issue 9, pp. 1270-1277 (2012)
http://dx.doi.org/10.1364/OME.2.001270


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Abstract

We report the properties of thermally evaporated Ge11.5As24Se64.5 chalcogenide films ion implanted at energies of 2.25MeV with Erbium at concentrations up to 0.4 mol%. The effect of post implant annealing on the refractive index of the films and on the 4I13/2→4I15/2 Er transition was studied. Photoluminescence was found to increase significantly and a lifetime of 1.35 ms was obtained in films annealed at 180°C. Different apparent lifetimes for the 4I13/2→4I15/2 transition were obtained for 980nm and 1470nm pumps and the origins of this phenomenon are discussed.

© 2012 OSA

OCIS Codes
(160.4330) Materials : Nonlinear optical materials
(160.5690) Materials : Rare-earth-doped materials
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Laser Materials

History
Original Manuscript: July 10, 2012
Revised Manuscript: August 7, 2012
Manuscript Accepted: August 7, 2012
Published: August 20, 2012

Citation
Kunlun Yan, Rongping Wang, Khu Vu, Steve Madden, Kidane Belay, Robert Elliman, and Barry Luther-Davies, "Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films," Opt. Mater. Express 2, 1270-1277 (2012)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-2-9-1270


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References

  1. B. J. Eggleton, B. Luther-Davies, and K. Richardson, “Chalcogenide photonics,” Nat. Photonics5, 141–148 (2011).
  2. K. Vu and S. Madden, “Tellurium dioxide Erbium doped planar rib waveguide amplifiers with net gain and 2.8 dB/cm internal gain,” Opt. Express18(18), 19192–19200 (2010). [CrossRef] [PubMed]
  3. T. Schweizer, D. Brady, and D. W. Hewak, “Fabrication and spectroscopy of erbium doped gallium lanthanum sulphide glass fibres for mid-infrared laser applications,” Opt. Express1(4), 102–107 (1997). [CrossRef] [PubMed]
  4. D. T. Tonchev, C. J. Haugen, R. G. DeCorby, J. N. McMullin, and S. O. Kasap, “Thermal and photoluminescence properties of Er3+-doped (GaSe)x(As2Se3)1-x glasses,” J. Non-Cryst. Solids326-327, 364–368 (2003). [CrossRef]
  5. T. W. Allen, M. M. Hawkeye, C. J. Haugen, R. G. DeCorby, J. N. McMullin, D. Tonchev, K. Koughia, and S. O. Kasap, “Photoluminescence measurements of Er-doped chalcogenide glasses,” J. Vac. Sci. Technol. A22(3), 921–924 (2004). [CrossRef]
  6. K. Koughia, M. Munzar, D. Tonchev, C. J. Haugen, R. G. Decorby, J. N. McMullin, and S. O. Kasap, “Photoluminescence in Er-doped Ge-Ga-Se glasses,” J. Lumin.112(1-4), 92–96 (2005). [CrossRef]
  7. S. Kasap, K. Koughia, G. Soundararajan, and M. G. Brik, “Optical and Photoluminescence Properties of Erbium-Doped Chalcogenide Glasses (GeGaS:Er),” IEEE J. Sel. Top. Quantum Electron.14(5), 1353–1360 (2008). [CrossRef]
  8. C. C. Ye, D. W. Hewak, M. Hempstead, B. N. Samson, and D. N. Payne, “Spectral properties of Er3+-doped gallium lanthanum sulphide glass,” J. Non-Cryst. Solids208(1-2), 56–63 (1996). [CrossRef]
  9. D. J. Coleman, P. Golding, T. A. King, and S. D. Jackson, “Spectroscopic and energy-transfer parameters for Er3+-doped and Er3+, Pr3+-codoped GeGaS glasses,” J. Opt. Soc. Am. B19(9), 1982–1989 (2002). [CrossRef]
  10. K. Kadono, T. Yazawa, S. Jiang, J. Porque, B.-C. Hwang, and N. Peyghambarian, “Rate equation analysis and energy transfer of Er3+-doped Ga2S3-GeS2-La2S3 glasses,” J. Non-Cryst. Solids331(1-3), 79–90 (2003). [CrossRef]
  11. S. J. Madden, D. Y. Choi, D. A. Bulla, A. V. Rode, B. Luther-Davies, V. G. Ta’eed, M. D. Pelusi, and B. J. Eggleton, “Long, low loss etched As2S3 chalcogenide waveguides for all-optical signal regeneration,” Opt. Express15(22), 14414–14421 (2007). [CrossRef] [PubMed]
  12. X. Gai, S. Madden, D. Y. Choi, D. Bulla, and B. Luther-Davies, “Dispersion engineered Ge11.5As24Se64.5 nanowires with a nonlinear parameter of 136 W−1m−1 at 1550 nm,” Opt. Express18(18), 18866–18874 (2010). [CrossRef] [PubMed]
  13. X. Gai, D.-Y. Choi, S. Madden, and B. Luther-Davies, “Polarization-independent chalcogenide glass nanowires with anomalous dispersion for all-optical processing,” Opt. Express20(12), 13513–13521 (2012). [CrossRef] [PubMed]
  14. S. Q. Gu, Q. Xu, E. E. Reuter, J. T. Verdeyen, and S. G. Bishop, “Photoluminescence and excitation spectroscopy in Er:As2S3 glass,” in Lasers and Electro-Optics Society Annual Meeting, 1993, LEOS '93 Conference Proceedings, IEEE (IEEE, 1993), pp. 206–207.
  15. S. Q. Gu, S. Ramachandran, E. E. Reuter, D. A. Turnbull, J. T. Verdeyen, and S. G. Bishop, “Novel broad-band excitation of Er3+ luminescence in chalcogenide glasses,” Appl. Phys. Lett.66(6), 670–672 (1995). [CrossRef]
  16. V. Lyubin, M. Klebanov, B. Sfez, and B. Ashkinadze, “Photoluminescence and photodarkening effect in erbium-doped chalcogenide glassy films,” Mater. Lett.58(11), 1706–1708 (2004). [CrossRef]
  17. C. Vigreux-Bercovici, A. Pradel, A. Fuchs, and J. Fick, “Effect of annealing on the photoluminescence in sputtered films of Er-doped chalcogenide glasses,” Phys. Chem. Glasses-B47(2), 162–166 (2006).
  18. J. Fick, É. J. Knystautas, A. Villeneuve, F. Schiettekatte, S. Roorda, and K. A. Richardson, “High photoluminescence in Erbium-doped chalcogenide thin films,” J. Non-Cryst. Solids272(2-3), 200–208 (2000). [CrossRef]
  19. Z. G. Ivanova, K. Koughia, D. Tonchev, J. C. Pivin, and S. O. Kasap, “Photoluminescence in Er-implanted amorphous Ge-S-Ga thin films,” J. Optoelectron. Adv. Mater.7, 1271–1276 (2005).
  20. R. P. Wang, D. Bulla, A. Smith, T. Wang, and B. Luther-Davies, “Structure and physical properties of GexAsySe1-x-y glasses with the same mean coordination number of 2.5,” J. Appl. Phys.109(2), 023517 (2011). [CrossRef]
  21. D. A. P. Bulla, R. P. Wang, A. Prasad, A. V. Rode, S. J. Madden, and B. Luther-Davies, “On the properties and stability of thermally evaporated Ge-As-Se thin films,” Appl. Phys., A Mater. Sci. Process.96(3), 615–625 (2009). [CrossRef]
  22. A. Prasad, C. J. Zha, R. P. Wang, A. Smith, S. Madden, and B. Luther-Davies, “Properties of GexAsySe1-x-y glasses for all-optical signal processing,” Opt. Express16(4), 2804–2815 (2008). [CrossRef] [PubMed]
  23. Z. G. Ivanova, V. S. Vassilev, E. Cernoskova, and Z. Cernosek, “Physicochemical, structural and fluorescence properties of Er-doped Ge-S-Ga glasses,” J. Phys. Chem. Solids64(1), 107–110 (2003). [CrossRef]
  24. P. Tronc, M. Bensoussan, A. Brenac, G. Errandonea, and C. Sebenne, “Raman-Scattering and Local Order in GexSe1-X Glasses for 1/3≤X≤1/2,” J. Phys.38(12), 1493–1498 (1977). [CrossRef]
  25. S. Mamedov, D. G. Georgiev, T. Qu, and P. Boolchand, “Evidence for nanoscale phase separation of stressed-rigid glasses,” J. Phys. Condens. Matter15(31), S2397–S2411 (2003). [CrossRef]

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