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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 3, Iss. 1 — Jan. 1, 2013
  • pp: 47–53

Complex strain distribution in individual facetted InGaN/GaN nano-columnar heterostructures

R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi, and K. Kishino  »View Author Affiliations


Optical Materials Express, Vol. 3, Issue 1, pp. 47-53 (2013)
http://dx.doi.org/10.1364/OME.3.000047


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Abstract

Selective area growth technique is very promising for the realization of optoelectronic nano-devices based on InGaN/GaN quantum disks, as it allows precise positioning of the nano-objects on the substrate. However, this fabrication method induces a pronounced pyramidal shape of the nano-columnar heterostructures. To understand how the optical properties of these heterostructures are affected by this shape, we investigated the linear polarization of the luminescence from 0-dimensional localization centers included in their active layer. Our experimental results and our simulation show that a complex strain distribution exist in the active layer and also that quantum dot-like objects can be used to probe the local strain distribution through nano-scale heterostructures.

© 2012 OSA

OCIS Codes
(160.4670) Materials : Optical materials
(160.4760) Materials : Optical properties
(300.6250) Spectroscopy : Spectroscopy, condensed matter
(160.4236) Materials : Nanomaterials
(220.4241) Optical design and fabrication : Nanostructure fabrication
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Nanomaterials

History
Original Manuscript: November 8, 2012
Revised Manuscript: December 9, 2012
Manuscript Accepted: December 9, 2012
Published: December 12, 2012

Citation
R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi, and K. Kishino, "Complex strain distribution in individual facetted InGaN/GaN nano-columnar heterostructures," Opt. Mater. Express 3, 47-53 (2013)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-3-1-47


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