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Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etchingYiyu Ou, Imran Aijaz, Valdas Jokubavicius, Rositza Yakimova, Mikael Syväjärvi, and Haiyan Ou »View Author Affiliations
Yiyu Ou,1
Imran Aijaz,1
Valdas Jokubavicius,2
Rositza Yakimova,2
Mikael Syväjärvi,2
and Haiyan Ou1,*
1Department of Photonics Engineering, Technical University of Denmark, DK-Lyngby 2800, Denmark 2Department of Physics, Chemistry and Biology, Linköping University, Linköping SE-58183, Sweden *Corresponding author: haou@fotonik.dtu.dk |
Optical Materials Express, Vol. 3, Issue 1, pp. 86-94 (2013)
http://dx.doi.org/10.1364/OME.3.000086
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Abstract
An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated. The nanopatterning process is more time-efficiency than the e-beam lithography or nanoimprint lithography process. The influences of the reactive-ion etching conditions and deposited Au film thickness to the subwavelength structure profile and its corresponding surface reflectance have been systematically investigated. Under the optimal experimental conditions, the average reflectance of the silicon carbide in the range of 390–784 nm is dramatically suppressed from 21.0% to 1.9% after introducing the pseudoperiodic nanostructures. A luminescence enhancement of 226% was achieved at an emission angle of 20° on the fluorescent silicon carbide. Meanwhile, the angle-resolved photoluminescence study presents a considerable omnidirectional luminescence enhancement.
© 2012 OSA
OCIS Codes
(250.5230) Optoelectronics : Photoluminescence
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6628) Thin films : Subwavelength structures, nanostructures
ToC Category:
Metamaterials
History
Original Manuscript: December 4, 2012
Revised Manuscript: December 12, 2012
Manuscript Accepted: December 12, 2012
Published: December 19, 2012
Citation
Yiyu Ou, Imran Aijaz, Valdas Jokubavicius, Rositza Yakimova, Mikael Syväjärvi, and Haiyan Ou, "Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching," Opt. Mater. Express 3, 86-94 (2013)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-3-1-86
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References
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- X. Li, J. Gao, L. Xue, and Y. Han, “Porous polymer films with gradient-refractive-index structure for broadband and omnidirectional antireflection coatings,” Adv. Funct. Mater.20, 259–265 (2010). [CrossRef]
- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J. 3, 489–499 (2011). [CrossRef]
- Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express17, 13747–13757 (2009).
- Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett.91, 221107 (2007). [CrossRef]
- X. Li, J. Gao, L. Xue, and Y. Han, “Porous polymer films with gradient-refractive-index structure for broadband and omnidirectional antireflection coatings,” Adv. Funct. Mater.20, 259–265 (2010). [CrossRef]
- A. Najar, A. B. Slimane, M. N. Hedhili, D. Anjum, R. Sougrat, T. K. Ng, and B. S. Ooi, “Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method,” J. Appl. Phys.112, 033502 (2012). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
- E. Matioli, B. Fleury, E. Rangel, T. Melo, E. Hu, J. Speck, and C. Weisbuch, “High extraction efficiency GaN-based photonic-crystal light-emitting diodes: comparison of extraction lengths between surface and embedded Photonic crystals,” Appl. Phys. Express3, 032103 (2010). [CrossRef]
- J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100, 171105 (2012). [CrossRef]
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- J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100, 171105 (2012). [CrossRef]
- E. Matioli, B. Fleury, E. Rangel, T. Melo, E. Hu, J. Speck, and C. Weisbuch, “High extraction efficiency GaN-based photonic-crystal light-emitting diodes: comparison of extraction lengths between surface and embedded Photonic crystals,” Appl. Phys. Express3, 032103 (2010). [CrossRef]
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- R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C7, 2180–2182 (2010). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
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- H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011). [CrossRef]
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- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J. 3, 489–499 (2011). [CrossRef]
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- Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express17, 13747–13757 (2009).
- Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett.91, 221107 (2007). [CrossRef]
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Tyagi, A.
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Adv. Funct. Mater.
- X. Li, J. Gao, L. Xue, and Y. Han, “Porous polymer films with gradient-refractive-index structure for broadband and omnidirectional antireflection coatings,” Adv. Funct. Mater.20, 259–265 (2010). [CrossRef]
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Adv. Mater.
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Appl. Phys. Express
- E. Matioli, B. Fleury, E. Rangel, T. Melo, E. Hu, J. Speck, and C. Weisbuch, “High extraction efficiency GaN-based photonic-crystal light-emitting diodes: comparison of extraction lengths between surface and embedded Photonic crystals,” Appl. Phys. Express3, 032103 (2010). [CrossRef]
Appl. Phys. Lett.
- J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100, 171105 (2012). [CrossRef]
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- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
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IEEE J. Sel. Top. Quantum Electron.
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IEEE Photonics J
- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J. 3, 489–499 (2011). [CrossRef]
J. Appl. Phys.
- A. Najar, A. B. Slimane, M. N. Hedhili, D. Anjum, R. Sougrat, T. K. Ng, and B. S. Ooi, “Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method,” J. Appl. Phys.112, 033502 (2012). [CrossRef]
- S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006). [CrossRef]
Nat. Photonics
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Opt. Express
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- J. W. Leem and J. S. Yu, “Wafer-scale highly-transparent and superhydrophilic sapphires for high-performance optics,” Opt. Express20, 26160–26166 (2012). [CrossRef] [PubMed]
- Y. Ou, D. Corell, C. Dam-Hansen, P. Petersen, and H. Ou, “Antireflective subwavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode,” Opt. Express19, A166–A172 (2011). [CrossRef] [PubMed]
Opt. Lett.
- Y. Ou, V. Jokubavicius, R. Yakimova, M. Syväjärvi, and H. Ou, “Omnidirectional luminescence enhancement of fluorescent SiC via pseudoperiodic antireflective subwavelength structures,” Opt. Lett.37, 3816–3818 (2012). [CrossRef] [PubMed]
Opt. Mater. Express
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Phys. Status Solidi C
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Proc. SPIE
- T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE7216, 721628 (2009). [CrossRef]
Thin Solid Films
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2012, Jewell, Appl. Phys. Lett.
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- A. Najar, A. B. Slimane, M. N. Hedhili, D. Anjum, R. Sougrat, T. K. Ng, and B. S. Ooi, “Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method,” J. Appl. Phys.112, 033502 (2012). [CrossRef]
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- L. Sainiemi, V. Jokinen, A. Shah, M. Shpak, S. Aura, P. Suvanto, and S. Franssila, “Non-reflcecting silicon and polymer surfaces by plasma etching and replication,” Adv. Mater.23, 122–126 (2011). [CrossRef]
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- S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, “Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN,” Appl. Phys. Lett.98, 071102 (2011). [CrossRef]
- H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011). [CrossRef]
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- X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J. 3, 489–499 (2011). [CrossRef]
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010). [CrossRef]
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