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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 3, Iss. 2 — Feb. 1, 2013
  • pp: 166–175

­Electroluminescent wavelength shift of Si-rich SiOx based blue and green MOSLEDs induced by O/Si composition Si-QD size variations

Bo-Han Lai, Chih-Hsien Cheng, and Gong-Ru Lin  »View Author Affiliations


Optical Materials Express, Vol. 3, Issue 2, pp. 166-175 (2013)
http://dx.doi.org/10.1364/OME.3.000166


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Abstract

Electroluminescent (EL) color shift of Si-rich SiOx with its O/Si composition detuned by changing the RF plasma powers during N2O/SiH4 vapor deposition are investigated. The higher O/Si composition ratio of Si-rich SiOx films when enlarging the RF plasma power contributes to an increment of the insulating SiO2 resistivity and the shrinkage silicon quantum dots (Si-QDs), indicating the fewer injected carriers in Si-QDs. The increasing oxygen content in Si-rich SiOx shortens the diffusion length of Si atoms to constrain the buried Si-QD size. In contrast to the blue-shift of EL peak wavelength induced by enlarging the RF plasma powers, the lengthening deposition time causes a thicker Si-rich SiOx film with more excessive Si atoms, thus providing larger Si-QDs for longer wavelength EL. The EL spectra of metal-oxide-semiconductor light-emitting diodes are red-shifted with increasing the Si-rich SiOx thickness due to the varied Si-QD size and degraded electron conductivity. The uniformity of Si-QDs in Si-rich SiOx layer contributes to the obvious wavelength shift when applying the biased current. The EL peak has a slightly blue-shifted phenomenon when the biased current increases under the band filling effect.

© 2013 OSA

OCIS Codes
(160.2540) Materials : Fluorescent and luminescent materials
(230.3670) Optical devices : Light-emitting diodes
(310.1860) Thin films : Deposition and fabrication
(160.4236) Materials : Nanomaterials

ToC Category:
Fluorescent and Luminescent Materials

History
Original Manuscript: October 31, 2012
Revised Manuscript: November 15, 2012
Manuscript Accepted: November 15, 2012
Published: January 4, 2013

Citation
Bo-Han Lai, Chih-Hsien Cheng, and Gong-Ru Lin, "­Electroluminescent wavelength shift of Si-rich SiOx based blue and green MOSLEDs induced by O/Si composition Si-QD size variations," Opt. Mater. Express 3, 166-175 (2013)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-3-2-166


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References

  1. L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett.57(10), 1046–1048 (1990). [CrossRef]
  2. Q. Ye, R. Tsu, and E. H. Nicollian, “Resonant tunneling via microcrystalline-silicon quantum confinement,” Phys. Rev. B Condens. Matter44(4), 1806–1811 (1991). [CrossRef] [PubMed]
  3. G. G. Qin, A. P. Li, B. R. Zhang, and B.-C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys.78(3), 2006–2009 (1995). [CrossRef]
  4. H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys.82(8), 4028–4032 (1997). [CrossRef]
  5. C.-H. Lin, S.-C. Lee, and Y.-F. Chen, “Strong room-temperature photoluminescence of hydrogenated amorphous silicon oxide and its correlation to porous silicon,” Appl. Phys. Lett.63(7), 902–904 (1993). [CrossRef]
  6. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000). [CrossRef] [PubMed]
  7. G.-R. Lin, Y.-H. Pai, and C.-T. Lin, “Microwatt MOSLED using SiOx with buried Si nanocrystals on Si nano-pillar array,” J. Lightwave Technol.26(11), 1486–1491 (2008). [CrossRef]
  8. G.-R. Lin, C.-J. Lin, and C.-K. Lin, “Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids,” Opt. Express15(5), 2555–2563 (2007). [CrossRef] [PubMed]
  9. B.-H. Lai, C.-H. Cheng, and G.-R. Lin, “Multicolor ITO/SiOx/p-Si/Al light emitting diodes with improved emission efficiency by small Si quantum dots,” IEEE J. Quantum Electron.47(5), 698–704 (2011). [CrossRef]
  10. G.-R. Lin, C.-J. Lin, and H.-C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett.91(9), 093122 (2007). [CrossRef]
  11. C.-H. Cheng, C.-L. Wu, C.-C. Chen, L.-H. Tsai, Y.-H. Lin, and G.-R. Lin, “Si-rich SixC1-x light-emitting diodes with buried Si quantum dots,” IEEE Photonics J.4(5), 1762–1775 (2012). [CrossRef]
  12. A. Rodriguez, J. Arenas, and J. C. Alonso, “Photoluminescence mechanisms in silicon quantum dots embedded in nanometric chlorinated-silicon nitride films,” J. Lumin.132(9), 2385–2389 (2012). [CrossRef]
  13. N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001). [CrossRef] [PubMed]
  14. K.-Y. Kuo, S.-W. Hsu, P.-R. Huang, W.-L. Chuang, C.-C. Liu, and P.-T. Lee, “Optical properties and sub-bandgap formation of nano-crystalline Si quantum dots embedded ZnO thin film,” Opt. Express20(10), 10470–10475 (2012). [CrossRef] [PubMed]
  15. Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” J. Appl. Phys.46(35), L833–L835 (2007). [CrossRef]
  16. G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010). [CrossRef]
  17. F. Iacona, G. Franzo, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys.87(3), 1295–1303 (2000). [CrossRef]
  18. G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys., A Mater. Sci. Process.74(1), 1–5 (2002). [CrossRef]
  19. C.-J. Lin and G.-R. Lin, “Defect-enhanced visible electroluminescence of multi-energy silicon-implanted silicon dioxide film,” IEEE J. Quantum Electron.41(3), 441–447 (2005). [CrossRef]
  20. G.-R. Lin, C.-J. Lin, C.-K. Lin, L.-J. Chou, and Y.-L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005). [CrossRef]
  21. B.-H. Lai, C.-H. Cheng, Y.-H. Pai, and G.-R. Lin, “Plasma power controlled deposition of SiOx with manipulated Si Quantum Dot size for photoluminescent wavelength tailoring,” Opt. Express18(5), 4449–4456 (2010). [CrossRef] [PubMed]
  22. G.-R. Lin, C.-J. Lin, and K.-C. Yu, “Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substrate,” J. Appl. Phys.96(5), 3025–3027 (2004). [CrossRef]
  23. G.-R. Lin and C.-J. Lin, “Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate,” J. Appl. Phys.95(12), 8484–8486 (2004). [CrossRef]
  24. G.-R. Lin, C.-H. Chang, C.-H. Cheng, C.-I. Wu, and P. S. Wang, “Transient UV and visible luminescent dynamics of Si-rich SiOx metal–oxide–semiconductor light-emitting diodes,” IEEE Photonics J.4(5), 1351–1364 (2012). [CrossRef]
  25. G. Chakraborty, S. Chattopadhyay, C. K. Sarkar, and C. Pramanik, “Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures,” J. Appl. Phys.101(2), 024315 (2007). [CrossRef]
  26. N. Tansu and L. J. Mawst, “Current injection efficiency of InGaAsN quantum-well lasers,” J. Appl. Phys.97(5), 054502 (2005). [CrossRef]
  27. H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010). [CrossRef]
  28. I. E. Titkov, D. A. Sannikov, Y.-M. Park, and J.-K. Son, “Blue light emitting diode internal and injection efficiency,” AIP Adv.2(3), 032117 (2012). [CrossRef]
  29. N. Tansu and L. J. Mawst, “The role of hole leakage in 1300-nm InGaAsN quantum-well lasers,” Appl. Phys. Lett.82(10), 1500–1502 (2003). [CrossRef]

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