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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 3, Iss. 2 — Feb. 1, 2013
  • pp: 166–175

­Electroluminescent wavelength shift of Si-rich SiOx based blue and green MOSLEDs induced by O/Si composition Si-QD size variations

Bo-Han Lai, Chih-Hsien Cheng, and Gong-Ru Lin  »View Author Affiliations

Optical Materials Express, Vol. 3, Issue 2, pp. 166-175 (2013)

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Electroluminescent (EL) color shift of Si-rich SiOx with its O/Si composition detuned by changing the RF plasma powers during N2O/SiH4 vapor deposition are investigated. The higher O/Si composition ratio of Si-rich SiOx films when enlarging the RF plasma power contributes to an increment of the insulating SiO2 resistivity and the shrinkage silicon quantum dots (Si-QDs), indicating the fewer injected carriers in Si-QDs. The increasing oxygen content in Si-rich SiOx shortens the diffusion length of Si atoms to constrain the buried Si-QD size. In contrast to the blue-shift of EL peak wavelength induced by enlarging the RF plasma powers, the lengthening deposition time causes a thicker Si-rich SiOx film with more excessive Si atoms, thus providing larger Si-QDs for longer wavelength EL. The EL spectra of metal-oxide-semiconductor light-emitting diodes are red-shifted with increasing the Si-rich SiOx thickness due to the varied Si-QD size and degraded electron conductivity. The uniformity of Si-QDs in Si-rich SiOx layer contributes to the obvious wavelength shift when applying the biased current. The EL peak has a slightly blue-shifted phenomenon when the biased current increases under the band filling effect.

© 2013 OSA

OCIS Codes
(160.2540) Materials : Fluorescent and luminescent materials
(230.3670) Optical devices : Light-emitting diodes
(310.1860) Thin films : Deposition and fabrication
(160.4236) Materials : Nanomaterials

ToC Category:
Fluorescent and Luminescent Materials

Original Manuscript: October 31, 2012
Revised Manuscript: November 15, 2012
Manuscript Accepted: November 15, 2012
Published: January 4, 2013

Bo-Han Lai, Chih-Hsien Cheng, and Gong-Ru Lin, "­Electroluminescent wavelength shift of Si-rich SiOx based blue and green MOSLEDs induced by O/Si composition Si-QD size variations," Opt. Mater. Express 3, 166-175 (2013)

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