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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 3, Iss. 4 — Apr. 1, 2013
  • pp: 426–432

Thermal annealing property of KOTiPO4 planar and ridge waveguides formed by MeV Si ion implantation

Jin-Hua Zhao, Xi-Feng Qin, Feng-Xiang Wang, Gang Fu, Jing Du, and Xue-Lin Wang  »View Author Affiliations


Optical Materials Express, Vol. 3, Issue 4, pp. 426-432 (2013)
http://dx.doi.org/10.1364/OME.3.000426


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Abstract

We report on the formation of KOTiPO4 optical ridge waveguide combined ion implantation and Ar-ion beam etching in this manuscript. We used 6 MeV silicon ion implanted into our samples with the fluence of 6 × 1014 ions/cm2, which is relative high values for both energy and fluence. The guided mode and light propagation properties were investigated by prism-coupling and end-face coupling method. Numerical simulation was performed based on the reconstructed 2D refractive index profile of waveguides cross section for comparison. We obtain non-leaky waveguide structure in nx direction after proper annealing treatment. The fabricated waveguide structures emerge as promising candidate for photonic design which will work at high temperature.

© 2013 OSA

OCIS Codes
(190.4390) Nonlinear optics : Nonlinear optics, integrated optics
(230.7390) Optical devices : Waveguides, planar

ToC Category:
Nonlinear Optical Materials

History
Original Manuscript: January 7, 2013
Revised Manuscript: February 26, 2013
Manuscript Accepted: February 26, 2013
Published: March 1, 2013

Citation
Jin-Hua Zhao, Xi-Feng Qin, Feng-Xiang Wang, Gang Fu, Jing Du, and Xue-Lin Wang, "Thermal annealing property of KOTiPO4 planar and ridge waveguides formed by MeV Si ion implantation," Opt. Mater. Express 3, 426-432 (2013)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-3-4-426


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