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Optical Materials Express

Optical Materials Express

  • Editor: David J. Hagan
  • Vol. 3, Iss. 6 — Jun. 1, 2013
  • pp: 671–683

Study of photoinduced birefringence vs As content in thin GeAsS films

K. Palanjyan, S. H. Messaddeq, Y. Messaddeq, R. Vallée, E. Knystautas, and T. Galstian  »View Author Affiliations

Optical Materials Express, Vol. 3, Issue 6, pp. 671-683 (2013)

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Thin films of GeAsS glass are prepared by e-beam evaporation technique. Photoinduced birefringence (PIB) is studied as function of the As content with concentrations ranging from 10% to 40%. Raman spectroscopy is used as additional tool to explain the corresponding changes undergone by the material system. The breakdown of homopolar bonds is suggested as a possible mechanism of photo induced structural changes leading to the creation of the PIB.

© 2013 OSA

OCIS Codes
(000.2190) General : Experimental physics
(310.6860) Thin films : Thin films, optical properties
(160.5335) Materials : Photosensitive materials

ToC Category:
Thin Films

Original Manuscript: February 21, 2013
Revised Manuscript: April 25, 2013
Manuscript Accepted: March 21, 2013
Published: May 1, 2013

K. Palanjyan, S. H. Messaddeq, Y. Messaddeq, R. Vallée, E. Knystautas, and T. Galstian, "Study of photoinduced birefringence vs As content in thin GeAsS films," Opt. Mater. Express 3, 671-683 (2013)

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