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Optical Materials Express

Optical Materials Express

  • Editor: David Hagan
  • Vol. 4, Iss. 3 — Mar. 1, 2014
  • pp: 553–558

Temperature-related exciton features on the Ga-/N-Faces of a free-standing HVPE GaN

C. P. Jiang, Z. P. Sui, K. Xu, X. H. Zheng, L. Liu, J. C. Zhang, X. Q. Wang, and B. Shen  »View Author Affiliations

Optical Materials Express, Vol. 4, Issue 3, pp. 553-558 (2014)

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An apparently different effect of excitonic luminescence has been observed on the Ga-/N-faces of a free-standing HVPE GaN. The neutral donor-bound exciton ( D 2 0 X) emission of the N-face is only dominant at lower temperature as compared with that of the Ga-face. Moreover, the temperature-related ratio of the peak intensity of D 2 0 X to X A n=1 (a free exciton) is found to be about 2.8, which is in coincidence with the ratio of the average dislocation density of the N-face to the Ga-face confirmed by Cathodoluminiscence images. These details could provide useful information for the design of GaN-based and related devices.

© 2014 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence

ToC Category:

Original Manuscript: January 14, 2014
Revised Manuscript: February 20, 2014
Manuscript Accepted: February 22, 2014
Published: February 26, 2014

C. P. Jiang, Z. P. Sui, K. Xu, X. H. Zheng, L. Liu, J. C. Zhang, X. Q. Wang, and B. Shen, "Temperature-related exciton features on the Ga-/N-Faces of a free-standing HVPE GaN," Opt. Mater. Express 4, 553-558 (2014)

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