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Optical Materials Express

Optical Materials Express

  • Editor: David Hagan
  • Vol. 4, Iss. 4 — Apr. 1, 2014
  • pp: 836–842

Direct-bandgap compositions of the CSiGeSn group-IV alloy

Richard Soref  »View Author Affiliations


Optical Materials Express, Vol. 4, Issue 4, pp. 836-842 (2014)
http://dx.doi.org/10.1364/OME.4.000836


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Abstract

Theoretical estimates are presented in this paper for the composition-dependent direct bandgap of bulk unstrained CSiGeSn. Interpolation between the corresponding bandgaps of elemental C, Si, Ge and Sn at their Γ, L, Δ, and X conduction band minima showed that each of the binary alloys CSn, SiSn and GeSn had a range of direct-gap compositions. Those ranges were plotted on a quaternary composition chart in order to define the boundaries of CSiGeSn composition space within which the alloy is “truly direct.” With the CSiGeSn cubic lattice parameter in the range of 0.576 nm to 0.649 nm, the predicted direct gaps ranged from 1.50 eV down to −0.41 eV. The boundaries of this space shift towards lower Sn content when bowing of the direct and indirect gaps is taken into account.

© 2014 Optical Society of America

OCIS Codes
(160.4670) Materials : Optical materials
(250.0250) Optoelectronics : Optoelectronics
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Semiconductors

History
Original Manuscript: January 6, 2014
Revised Manuscript: March 20, 2014
Manuscript Accepted: March 10, 2014
Published: March 27, 2014

Citation
Richard Soref, "Direct-bandgap compositions of the CSiGeSn group-IV alloy," Opt. Mater. Express 4, 836-842 (2014)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-4-4-836


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