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Optical Materials Express

Optical Materials Express

  • Editor: David Hagan
  • Vol. 4, Iss. 5 — May. 1, 2014
  • pp: 1030–1041

Bandgap energy bowing parameter of strained and relaxed InGaN layers

G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, and J.P. Salvestrini  »View Author Affiliations


Optical Materials Express, Vol. 4, Issue 5, pp. 1030-1041 (2014)
http://dx.doi.org/10.1364/OME.4.001030


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Abstract

This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed InxGa1−xN layers. Samples are grown by metal organic vapor phase epitaxy on GaN template substrate for indium compositions in the range of 0<x<0.25. The bangap emission energy is characterized by cathodoluminescence and the indium composition as well as the strain state are deduced from high resolution X-ray diffraction measurements. The experimental variation of the bangap emission energy with indium content can be described by the standard quadratic equation, fitted using a relative least square method and qualified with a chi square test. Our approach leads to values of the bandgap energy bowing parameter equal to 2.87±0.20eV and 1.32±0.28eV for relaxed and strained layers (determined for the first time since the revision of the InN bandgap energy in 2002), respectively. The corresponding modified Vegard’s laws describe accurately the indium content dependence of the bandgap emission energy in InGaN alloy and for the whole range of indium content. Finally, as an example of application, 3D mapping of indium content in a thick InGaN layer is deduced from bandgap energy measurements using cathodoluminescence and a corresponding hyperspectral map.

© 2014 Optical Society of America

OCIS Codes
(120.0120) Instrumentation, measurement, and metrology : Instrumentation, measurement, and metrology
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Semiconductors

History
Original Manuscript: February 18, 2014
Revised Manuscript: April 4, 2014
Manuscript Accepted: April 5, 2014
Published: April 29, 2014

Citation
G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, and J.P. Salvestrini, "Bandgap energy bowing parameter of strained and relaxed InGaN layers," Opt. Mater. Express 4, 1030-1041 (2014)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-4-5-1030


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