OSA's Digital Library

Optical Materials Express

Optical Materials Express

  • Editor: David Hagan
  • Vol. 4, Iss. 5 — May. 1, 2014
  • pp: 1067–1076

Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology

Daoyou Guo, Zhenping Wu, Peigang Li, Yuehua An, Han Liu, Xuncai Guo, Hui Yan, Guofeng Wang, Changlong Sun, Linghong Li, and Weihua Tang  »View Author Affiliations


Optical Materials Express, Vol. 4, Issue 5, pp. 1067-1076 (2014)
http://dx.doi.org/10.1364/OME.4.001067


View Full Text Article

Enhanced HTML    Acrobat PDF (2183 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

Laser molecular beam epitaxy technology has been employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates. After optimizing the growth parameters, ( 2 ¯ 01) -oriented β-Ga2O3 thin film was obtained. Ultraviolet-visible absorption spectrum demonstrates that the prepared β-Ga2O3 thin film shows excellent solar-blind ultraviolet (UV) characteristic with a band gap of 5.02 eV. A prototype photodetector device with a metal-semiconductor-metal structure has been fabricated using high quality β-Ga2O3 film. The device exhibits obvious photoresponse under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetectors.

© 2014 Optical Society of America

OCIS Codes
(040.7190) Detectors : Ultraviolet
(230.5160) Optical devices : Photodetectors
(240.0310) Optics at surfaces : Thin films
(160.5335) Materials : Photosensitive materials

ToC Category:
Laser Materials Processing

History
Original Manuscript: February 7, 2014
Revised Manuscript: April 19, 2014
Manuscript Accepted: April 20, 2014
Published: May 1, 2014

Citation
Daoyou Guo, Zhenping Wu, Peigang Li, Yuehua An, Han Liu, Xuncai Guo, Hui Yan, Guofeng Wang, Changlong Sun, Linghong Li, and Weihua Tang, "Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology," Opt. Mater. Express 4, 1067-1076 (2014)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-4-5-1067


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. A. Malik, A. Sêco, E. Fortunato, and R. Martins, “New UV-enhanced solar blind optical sensors based on monocrystalline zinc sulphide,” Sens. Actuators A Phys.67(1-3), 68–71 (1998). [CrossRef]
  2. L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale3(3), 1120–1126 (2011). [CrossRef] [PubMed]
  3. P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett.88(15), 153107 (2006). [CrossRef]
  4. R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett.98(13), 131114 (2011). [CrossRef]
  5. Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater.20(22), 3972–3978 (2010). [CrossRef]
  6. Z. Huang, W. Weng, S. Chang, C. Chiu, S. Wu, and T. Hsueh, “Ga2O3/AlGaN/GaN heterostructure ultraviolet three-band photodetector,” IEEE Sens. J.13(9), 3462–3467 (2013). [CrossRef]
  7. T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates,” Appl. Phys. Express1(1), 011202 (2008). [CrossRef]
  8. M. Razeghi, “Short-wavelength solar-blind detectors-status, prospects, and markets,” Proc. IEEE90(6), 1006–1014 (2002). [CrossRef]
  9. X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater.21(45), 4625–4630 (2009). [CrossRef]
  10. W. Weng, T. Hsueh, S. Chang, G. Huang, and H. Hsueh, “A beta-Ga2O3/GaN schottky-barrier photodetector,” IEEE Photon. Technol. Lett.23(7), 444–446 (2011). [CrossRef]
  11. M. Liao, Y. Koide, and J. Alvarez, “Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact,” Appl. Phys. Lett.87(2), 022105 (2005). [CrossRef]
  12. G. Sinha, K. Adhikary, and S. Chaudhuri, “Sol-gel derived phase pure α-Ga2O3 nanocrystalline thin film and its optical properties,” J. Cryst. Growth276(1-2), 204–207 (2005). [CrossRef]
  13. Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett.90(3), 031912 (2007). [CrossRef]
  14. Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater.28(4), 415–417 (2006). [CrossRef]
  15. M. Fleischer, W. Hanrieder, and H. Meixner, “Stability of semiconducting gallium oxide thin films,” Thin Solid Films190(1), 93–102 (1990). [CrossRef]
  16. Y. Lv, J. Ma, W. Mi, C. Luan, Z. Zhu, and H. Xiao, “Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique,” Vacuum86(12), 1850–1854 (2012). [CrossRef]
  17. T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys.46(11), 7217–7220 (2007). [CrossRef]
  18. S. Nakagomi and Y. Kokubun, “Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate,” J. Cryst. Growth349(1), 12–18 (2012). [CrossRef]
  19. H. Ohta, M. Orita, M. Hirano, K. Ueda, and H. Hosono, “Epitaxial growth of transparent conductive oxides,” Int. J. Mod. Phys. B16(01n02), 173–180 (2002). [CrossRef]
  20. J. Narayan and B. Larson, “Domain epitaxy: A unified paradigm for thin film growth,” J. Appl. Phys.93(1), 278–285 (2003). [CrossRef]
  21. L. Guo, X. Shen, G. Zhu, and K. Chen, “Preparation and gas-sensing performance of In2O3 porous nanoplatelets,” Sens. Actuators B Chem.155(2), 752–758 (2011). [CrossRef]
  22. S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C117(8), 4194–4200 (2013). [CrossRef]
  23. S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo, and H. M. Chang, “ZnO photoconductive sensors epitaxially grown on sapphire substrates,” Sens. Actuators A Phys.140(1), 60–64 (2007). [CrossRef]
  24. N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces2(7), 1973–1979 (2010). [CrossRef]
  25. D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy95, 237–245 (2013). [CrossRef]
  26. T. Murphy, K. Moazzami, and J. Phillips, “Trap-related photoconductivity in ZnO epilayers,” J. Electron. Mater.35(4), 543–549 (2006). [CrossRef]
  27. P. Ravadgar, R. H. Horng, S. D. Yao, H. Y. Lee, B. R. Wu, S. L. Ou, and L. W. Tu, “Effects of crystallinity and point defects on optoelectronic applications of β-Ga₂O₃ epilayers,” Opt. Express21(21), 24599–24610 (2013). [CrossRef] [PubMed]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited