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Optical Materials Express

Optical Materials Express

  • Editor: David Hagan
  • Vol. 4, Iss. 5 — May. 1, 2014
  • pp: 1067–1076

Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology

Daoyou Guo, Zhenping Wu, Peigang Li, Yuehua An, Han Liu, Xuncai Guo, Hui Yan, Guofeng Wang, Changlong Sun, Linghong Li, and Weihua Tang  »View Author Affiliations

Optical Materials Express, Vol. 4, Issue 5, pp. 1067-1076 (2014)

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Laser molecular beam epitaxy technology has been employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates. After optimizing the growth parameters, ( 2 ¯ 01) -oriented β-Ga2O3 thin film was obtained. Ultraviolet-visible absorption spectrum demonstrates that the prepared β-Ga2O3 thin film shows excellent solar-blind ultraviolet (UV) characteristic with a band gap of 5.02 eV. A prototype photodetector device with a metal-semiconductor-metal structure has been fabricated using high quality β-Ga2O3 film. The device exhibits obvious photoresponse under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetectors.

© 2014 Optical Society of America

OCIS Codes
(040.7190) Detectors : Ultraviolet
(230.5160) Optical devices : Photodetectors
(240.0310) Optics at surfaces : Thin films
(160.5335) Materials : Photosensitive materials

ToC Category:
Laser Materials Processing

Original Manuscript: February 7, 2014
Revised Manuscript: April 19, 2014
Manuscript Accepted: April 20, 2014
Published: May 1, 2014

Daoyou Guo, Zhenping Wu, Peigang Li, Yuehua An, Han Liu, Xuncai Guo, Hui Yan, Guofeng Wang, Changlong Sun, Linghong Li, and Weihua Tang, "Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology," Opt. Mater. Express 4, 1067-1076 (2014)

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