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Optical Materials Express

Optical Materials Express

  • Editor: David Hagan
  • Vol. 4, Iss. 6 — Jun. 1, 2014
  • pp: 1178–1185

Structural and optical characteristics of Ge1−xSn x /Ge superlattices grown on Ge-buffered Si(001) wafers

Jia-Zhi Chen, H. Li, H. H. Cheng, and Guo-En Chang  »View Author Affiliations

Optical Materials Express, Vol. 4, Issue 6, pp. 1178-1185 (2014)

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We report an investigation on low dimensional Ge1−xSn x /Ge heterostructures. A series of strained-layer Ge1−xSn x /Ge superlattices with various Sn contents up to a threshold value that affords a direct bandgap is achieved by the technique of low temperature growth using molecular beam epitaxy. The Sn composition, strain status, and crystallographic are systematically characterized by cross-sectional transmission electron microscope and x-ray diffraction. Optical absorption measurements were carried out at room temperature to determine the bandgap energies of the Ge1−xSn x /Ge superlattices. Analyzing the direct transition energies reveals the room-temperature quantum confinement in the Ge1−xSn x /Ge superlattices. Present investigation demonstrates the growth and the quantum confinement of Ge1−xSn x /Ge superlattices, moving an important step forward toward the development of high-performance photonic devices based on Sn-containing group-IV low-dimensional structures.

© 2014 Optical Society of America

OCIS Codes
(160.4670) Materials : Optical materials
(160.4760) Materials : Optical properties
(300.1030) Spectroscopy : Absorption

ToC Category:

Original Manuscript: March 20, 2014
Revised Manuscript: May 6, 2014
Manuscript Accepted: May 6, 2014
Published: May 14, 2014

Jia-Zhi Chen, H. Li, H. H. Cheng, and Guo-En Chang, "Structural and optical characteristics of Ge1−xSnx/Ge superlattices grown on Ge-buffered Si(001) wafers," Opt. Mater. Express 4, 1178-1185 (2014)

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