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Optical Materials Express

Optical Materials Express

  • Editor: David Hagan
  • Vol. 4, Iss. 7 — Jul. 1, 2014
  • pp: 1373–1382

Optical properties of serrated GaN nanowires

Anuradha Patra, Zheng Ma, Latika Menon, and Achanta Venu Gopal  »View Author Affiliations


Optical Materials Express, Vol. 4, Issue 7, pp. 1373-1382 (2014)
http://dx.doi.org/10.1364/OME.4.001373


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Abstract

GaN nanowires with periodic serrated morphology have been synthesized on Si substrate by Au-catalyzed vapor-liquid-solid growth mode. The presence of Mn vapor during growth process has been found to enhance the production and quality of serrated GaN nanowires, without introducing dopants. We have performed photoluminescence and Raman spectral measurements on nanowires with different levels of serration. Temperature dependent photoluminescence revealed a broad yellow-green and red luminescence in the samples. Room temperature Raman spectra exhibits disorder-activated phonon mode at ~670 cm−1, in addition to E2(high) and A1(LO) modes of GaN. Further investigation of Raman spectra revealed the presence of tensile stress in the GaN nanowires when Mn vapor is present during the growth process. The dependence of the optical properties on the morphology of GaN nanowires shows that they can be tuned by initial synthesis conditions.

© 2014 Optical Society of America

OCIS Codes
(000.0000) General : General
(160.0160) Materials : Materials
(160.4760) Materials : Optical properties
(170.5660) Medical optics and biotechnology : Raman spectroscopy
(160.4236) Materials : Nanomaterials

ToC Category:
Nanomaterials

History
Original Manuscript: May 1, 2014
Revised Manuscript: June 11, 2014
Manuscript Accepted: June 11, 2014
Published: June 13, 2014

Citation
Anuradha Patra, Zheng Ma, Latika Menon, and Achanta Venu Gopal, "Optical properties of serrated GaN nanowires," Opt. Mater. Express 4, 1373-1382 (2014)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-4-7-1373


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