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Optical Materials Express

Optical Materials Express

  • Editor: David Hagan
  • Vol. 4, Iss. 8 — Aug. 1, 2014
  • pp: 1632–1640

Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate

B. C. Lin, C. H. Chiu, C. Y. Lee, H. V. Han, P. M. Tu, T. P. Chen, Z. Y. Li, P. T. Lee, C. C. Lin, G. C. Chi, C. H. Chen, B. Fan, C. Y. Chang, and H. C. Kuo  »View Author Affiliations


Optical Materials Express, Vol. 4, Issue 8, pp. 1632-1640 (2014)
http://dx.doi.org/10.1364/OME.4.001632


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Abstract

In this work, flip-chip ultraviolet light-emitting diodes (FCUV-LEDs) on patterned sapphire substrate (PSS) at 375 nm were grown by an atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). A specialized reactive plasma deposited (RPD) AlN nucleation layer was utilized on the PSS to enhance the quality of the epitaxial layer. By using high-resolution X-ray diffraction, the full-width at half-maximum of the rocking curve shows that the FCUV-LEDs with RPD AlN nucleation layer had better crystalline quality when compared to conventional GaN nucleation samples. From the transmission electron microscopy (TEM) image, it can be observed that the tip and incline portion of the pattern was smooth using the RPD AlN nucleation layer. The threading dislocation densities (TDDs) are reduced from 7 × 107 cm−2 to 2.5 × 107 cm−2 at the interface between the u-GaN layers for conventional and AlN PSS devices, respectively. As a result, a much higher light output power was achieved. The improvement of light output power at an injection current of 20 mA was enhanced by 30%. Further photoluminescence measurement and numerical simulation confirm such increase of output power can be attributed to the improvement of material quality and light extraction.

© 2014 Optical Society of America

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optoelectronics

History
Original Manuscript: April 25, 2014
Revised Manuscript: June 19, 2014
Manuscript Accepted: June 20, 2014
Published: July 17, 2014

Citation
B. C. Lin, C. H. Chiu, C. Y. Lee, H. V. Han, P. M. Tu, T. P. Chen, Z. Y. Li, P. T. Lee, C. C. Lin, G. C. Chi, C. H. Chen, B. Fan, C. Y. Chang, and H. C. Kuo, "Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate," Opt. Mater. Express 4, 1632-1640 (2014)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-4-8-1632


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