Acceleration of carrier recovery in a quantum well semiconductor optical amplifier due to the tunneling effect

• Abstract

• JOSA B, Vol. 29, Issue 10, pp. 2990-2994 (October 2012)
• Xi Huang, Cui Qin, Yu Yu, Xinliang Zhang

Design of single-mode narrow-bandwidth thermal emitters for enhanced infrared light sources

• Abstract

• JOSA B, Vol. 30, Issue 1, pp. 165-172 (January 2013)
• Takuya Inoue, Takashi Asano, Menaka De Zoysa, Ardavan Oskooi, Susumu Noda

Analysis of the strong coupling regime of a quantum well in a photonic crystal microcavity and its polarization dependence studied by the finite-difference time-domain method

• Abstract

• JOSA B, Vol. 30, Issue 5, pp. 1222-1231 (May 2013)
• Jose M. Llorens, Ivan Prieto, Luis E. Munioz-Camuniez, Pablo Aitor Postigo

Exploring spatial resolution in high-sensitivity nanogap quantum dot photodetectors

• Abstract

• Optics Letters, Vol. 37, Issue 15, pp. 3144-3146 (August 2012)
• Ludan Huang, Matthew Strathman, Lih Y. Lin

Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

• Abstract

• Optics Letters, Vol. 38, Issue 2, pp. 202-204 (January 2013)
• Yun Ji, Zi-Hui Zhang, Swee Tiam Tan, Zhen Gang Ju, Zabu Kyaw, Namig Hasanov, Wei Liu, Xiao Wei Sun, Hilmi Volkan Demir

Theory of high-speed nanolasers and nanoLEDs

• Abstract

• Optics Express, Vol. 20, Issue 15, pp. 16450-16470 (July 2012)
• Chi-Yu Adrian Ni, Shun Lien Chuang

Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy

• Abstract

• Optics Express, Vol. 20, Issue 18, pp. 20647-20658 (August 2012)
• Kazuue Fujita, Masamichi Yamanishi, Shinichi Furuta, Kazunori Tanaka, Tadataka Edamura, Tillmann Kubis, Gerhard Klimeck

Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures

• Abstract

• Optics Express, Vol. 20, Issue 19, pp. 21264-21271 (September 2012)
• Oscar Gustafsson, Amir Karim, Jesper Berggren, Qin Wang, Carl Reuterskiöld-Hedlund, Christopher Ernerheim-Jokumsen, Markus Soldemo, Jonas Weissenrieder, Sirpa Persson, Susanne Almqvist, Ulf Ekenberg, Bertrand Noharet, Carl Asplund, Mats Göthelid, Jan Y. Andersson, Mattias Hammar

Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities

• Abstract

• Optics Express, Vol. 20, Issue 20, pp. 22181-22187 (September 2012)
• Andrew Lee, Qi Jiang, Mingchu Tang, Alwyn Seeds, Huiyun Liu

Transfer of arbitrary quantum emitter states to near-field photon superpositions in nanocavities

• Abstract

• Optics Express, Vol. 20, Issue 20, pp. 22412-22428 (September 2012)
• Arthur C. T. Thijssen, Martin J. Cryan, John G. Rarity, Ruth Oulton

Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters

• Abstract

• Optics Express, Vol. 20, Issue 22, pp. 24320-24329 (October 2012)
• Takahiro Matsumoto, Sho Iwayama, Takao Saito, Yasuyuki Kawakami, Fumio Kubo, Hiroshi Amano

1.3 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces

• Abstract

• Optics Express, Vol. 20, Issue 26, pp. B315-B321 (December 2012)
• Katsuaki Tanabe, Katsuyuki Watanabe, Yasuhiko Arakawa

Vertical InGaN light-emitting diode with a retained patterned sapphire layer

• Abstract

• Optics Express, Vol. 20, Issue 106, pp. A1019-A1025 (November 2012)
• Y.C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, C. H. Yen, Wei-Chih Lai, Schang Jing Hon, Tsun Kai Ko

Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light trapping structures

• Abstract

• Optics Express, Vol. 20, Issue 106, pp. A864-A878 (November 2012)
• Claiborne O. McPheeters, Edward T. Yu

High performance terahertz quantum cascade laser sources based on intracavity difference frequency generation

• Abstract

• Optics Express, Vol. 21, Issue 1, pp. 968-973 (January 2013)
• Q. Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai, M. Razeghi

A 340-nm-band ultraviolet laser diode composed of GaN well layers

• Abstract

• Optics Express, Vol. 21, Issue 3, pp. 3133-3137 (February 2013)
• Yoji Yamashita, Masakazu Kuwabara, Kousuke Torii, Harumasa Yoshida

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

• Abstract

• Optics Express, Vol. 21, Issue 4, pp. 4958-4969 (February 2013)
• Zi-Hui Zhang, Swee Tiam Tan, Wei Liu, Zhengang Ju, Ke Zheng, Zabu Kyaw, Yun Ji, Namig Hasanov, Xiao Wei Sun, Hilmi Volkan Demir

Hitless wavelength-selective switch based on quantum well second-order series-coupled microring resonators

• Abstract

• Optics Express, Vol. 21, Issue 5, pp. 6377-6390 (March 2013)
• Hiroki Ikehara, Tsuyoshi Goto, Hiroshi Kamiya, Taro Arakawa, Yasuo Kokubun

Colloidal quantum dot-based plasmon emitters with planar integration and long-range guiding

• Abstract

• Optics Express, Vol. 21, Issue 7, pp. 7882-7890 (April 2013)
• Masashi Miyata, Junichi Takahara

Visible cathodoluminescence of quantum dot films by direct irradiation of electron beam and its materialization as a field emission device

• Abstract

• Optics Express, Vol. 21, Issue 10, pp. 12519-12526 (May 2013)
• Ju Yeon Woo, Jongsoo Lee, Hansung Lee, Naesung Lee, Ji Hye Oh, Young Rag Do, Chang-Soo Han