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Photonics Research

Photonics Research

| A joint OSA/Chinese Laser Press publication

  • Editor: Zhiping (James) Zhou
  • Vol. 1, Iss. 3 — Oct. 1, 2013
  • pp: 140–147

High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications [Invited]

Léopold Virot, Laurent Vivien, Jean-Marc Fédéli, Yann Bogumilowicz, Jean-Michel Hartmann, Frédéric Bœuf, Paul Crozat, Delphine Marris-Morini, and Eric Cassan  »View Author Affiliations

Photonics Research, Vol. 1, Issue 3, pp. 140-147 (2013)

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This paper reports on high-performance waveguide-integrated germanium photodiodes for optical communications applications. 200 mm wafers and production tools were used to fabricate the devices. Yields over 97% were obtained for three different compact photodiodes ( 10 × 10 μm and intrinsic region width of 0.5, 0.7, and 1 μm) within the same batch of three wafers. Those photodiodes exhibit low dark currents under reverse bias with median values of 74, 62, and 61 nA for intrinsic widths of 0.5, 0.7, and 1 μm, respectively, over a full wafer. Responsivities up to 0.78 A / W at 1550 nm and zero bias were measured. Zero bias operation is possible for 25 and 40 Gbps with receiver sensitivity estimated to 13.9 and 12.3 dBm , respectively.

© 2013 Chinese Laser Press

OCIS Codes
(040.5160) Detectors : Photodetectors
(130.0250) Integrated optics : Optoelectronics
(130.3120) Integrated optics : Integrated optics devices
(230.5160) Optical devices : Photodetectors
(230.5170) Optical devices : Photodiodes

ToC Category:
Integrated Optics

Original Manuscript: June 29, 2013
Revised Manuscript: August 29, 2013
Manuscript Accepted: August 29, 2013
Published: October 2, 2013

Léopold Virot, Laurent Vivien, Jean-Marc Fédéli, Yann Bogumilowicz, Jean-Michel Hartmann, Frédéric Bœuf, Paul Crozat, Delphine Marris-Morini, and Eric Cassan, "High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications [Invited]," Photon. Res. 1, 140-147 (2013)

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