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Emission characteristics of photonic crystal light-emitting diodes |
Applied Optics, Vol. 50, Issue 19, pp. 3233-3239 (2011)
http://dx.doi.org/10.1364/AO.50.003233
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Abstract
Experimentally measured optical properties of photonic crystal LEDs are reported here. Photonic crystal and photonic quasi-crystal structures were fabricated on GaN epilayer LED wafer material using both direct-write electron beam lithography and nanoimprint lithography. Some of these structures were processed to make finished LEDs. Both electroluminescence and photoluminescence measurements were performed on these structures. Devices were characterized for their current-voltage characteristics, emission spectra, far-field emission pattern, and angular emission pattern. These results are useful for fabricating photonic crystal LEDs and assessing their operational properties.
© 2011 Optical Society of America
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(350.4238) Other areas of optics : Nanophotonics and photonic crystals
(220.4241) Optical design and fabrication : Nanostructure fabrication
(160.5298) Materials : Photonic crystals
ToC Category:
Optical Devices
History
Original Manuscript: December 10, 2010
Revised Manuscript: April 7, 2011
Manuscript Accepted: April 7, 2011
Published: June 24, 2011
Virtual Issues
Vol. 6, Iss. 8 Virtual Journal for Biomedical Optics
Citation
Ali Z. Khokhar, Keith Parsons, Graham Hubbard, Ian M. Watson, Faiz Rahman, Douglas S. Macintyre, Chang Xiong, David Massoubre, Zheng Gong, Erdan Gu, Nigel P. Johnson, Richard M. De La Rue, Martin D. Dawson, Steve J. Abbott, Martin D. B. Charlton, and Martin Tillin, "Emission characteristics of photonic crystal light-emitting diodes," Appl. Opt. 50, 3233-3239 (2011)
http://www.opticsinfobase.org/vjbo/abstract.cfm?URI=ao-50-19-3233
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